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零件编号 | BD1LB500EFJ-C | ||
描述 | In-Vehicle 1ch Low Side Switch | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
Datasheet
1ch Low Side Switch IC
In-Vehicle 1ch Low Side Switch
BD1LB500 Series (BD1LB500EFJ-C BD1LB500FVM-C)
Features
■ Built-in overcurrent limiting circuit
■ Built-in thermal shutdown circuit (TSD)
■ Built-in open load detection circuit (at output OFF)
■ Enables direct control from CMOS logic ICs, etc.
■ Low standby current
■ Built-in under voltage lock out circuit
■ Built-in diagnostic output (ST) terminal
■ Low ON resistance RDS(ON)=350mΩ(Typ) (VDD=IN=5V,
Ta=25°C, IOUT=0.25A)
■ Built-in overvoltage protection(active clamp) for output
circuit
■ Monolithic power IC in which the control unit (CMOS)
and power MOS FET are incorporated into one chip
■ 1ch low side switch for driving mechanical relay coil
■ AEC-Q100 Qualified(1)
(1) Grade1
Overview
BD1LB500 Series is an in-vehicle 1ch low side switch.
This switch builds in the overcurrent limiting circuit,
thermal shutdown circuit, open load detection circuit and
under voltage lock out circuit. It also provides the
diagnostic output circuit when an abnormality is
detected.
Application
■ In-vehicle application (Air conditioners, body devices,
meters, etc.)
Basic Application Circuit (Recommendation)
VDD
Specifications
Operating voltage range
ON resistance (25°C, Typ.)
Overcurrent limitation (Typ.)
Active clamp energy (25°C)
3.5V to 5.5V
350mΩ
1.50A
25mJ
Package
HTSOP-J8
MSOP8
4.90mm x 6.00mm x 1.00mm
2.90mm x 4.00mm x 0.90mm
HTSOP-J8
VBAT
RL
MSOP8
0.1µF
8
VDD
Logic
7
N.C.
6
DRAIN
Under voltage
lock out
Open load
detection
Overvoltage
protection
5
DRAIN
Rext (2)
Over current
Limit
SOURCE
IN
ST
SOURCE (GND)
(GND)
1234
10k (3)
(2) When the open detection function is required, an external resistance must be added between DRAIN terminal and SOURCE terminal.
(3) It is necessary to detect unusual state(ST terminal is low) when VDD terminal is opened.
Product configuration: Silicon monolithic integrated circuit
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○The product is not designed for radiation resistance.
1/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006
BD1LB500 Series
Datasheet
Characteristic Data (Reference Data) (VDD=5V, IN=5V, Tj=25°C unless otherwise is specified)
800
700
600
500
400
300
200
100
0
-50 -25 0
25 50 75 100 125 150
Tj [°C]
Figure 6. Output ON Resistance Characteristic
[Temperature Characteristic]
800
700
600
500
400
300
200
100
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD [V]
Figure 7. Output ON Resistance Characteristic
[Source Voltage Characteristic]
10.0
8.0
6.0
4.0
2.0
0.0
0123456
VDD [V]
Figure 8. Standby Current Characteristic
[Source Voltage Characteristic]
7
200
150
100 Tj=150°C
Tj=25°C
50
Tj=-40°C
0
0123456
IN [V]
Figure 9. Input Current Characteristic
[Input Voltage Characteristic]
7
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
8/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006
BD1LB500 Series
Datasheet
Revision History
Date
Revision
Changes
01.Aug.2013
003 New Release
06.Aug.2013
10.Jan.2014
1.Apr.2015
004 ・P.11 Figure20 VOUT timing chart is modified.
005
・P4. Condition of Diagnostic output voltage “L level” is Added.
・P4. Item of Diagnostic output voltage “H level” is Added.
・P1. “AEC-Q100 qualified” is added in Features
・P1. Note (1),(2) and (3) are added
・P2. Pin No 7 N.C. is added in Pin Description
・P2. “Cooling Tab”(Symbol; TAB) is added in Pin Description
006 ・P3. Note (6) is added
・P4. Min of “ Diagnostic output voltage “H level” “ is changed to 4.88V
・P9. ”ton” is changed to “toff” in Figure 11. 13.
・P10. Figure 17 is changed
・P15. FIN is changed to TAB in 15)
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
16/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006
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页数 | 19 页 | ||
下载 | [ BD1LB500EFJ-C.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
BD1LB500EFJ-C | In-Vehicle 1ch Low Side Switch | ROHM Semiconductor |
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