|
|
零件编号 | BD8665GW | ||
描述 | Boost DC/DC Charger | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
Datasheet
Battery Charger IC Series
Boost DC/DC Charger
With Input Current Limiter
BD8664GW BD8665GW BD8668GW
General Description
BD8664GW, BD8665GW and BD8668GW are lithium-ion
battery charger IC’s, suitable for charging 2S batteries
from a 5V source, such as a USB port with DC/DC boost
topology.
Features
CP/CV Charging
Charge-On/ Off control available with EN pin
Integrated Input Detection (VBUSOK)
Integrated Power Good
Boost Switching Topology
Low Ron integrated MOSFET
Output Short Circuit Protection
0.4mm pitch Chip Scale Package (UCSP75M2)
Applications
DVC, DSC, MID and other Lithium battery-powered
portable devices
Key Specifications
Input Current Accuracy
±2%(BD8664GW)
±3%(BD8665GW/BD8668GW)
Charging Voltage Accuracy
±0.5%
Selectable Input Current
100mA/500mA/900mA/1500mA (max)
Charging frequency
1MHz (typ)
Input Standby Current
71µA(typ)
battery leakage current while charging is off 0µA(typ)
Package
UCSP75M2
W(Typ) x D(Typ) x H(Max)
2.20mm x 2.20mm x 0.85mm
Line Up
Charge
Voltage
8.30V
8.40V
Package
USCP75M2
Pin
number
20
25
Orderable
Part Number
BD8664GW
BD8665GW
BD8668GW
Typical Application Circuit
VBUS+
D+
D-
OVP
BC1.2
Detector
SDA
SCL
HOST
VBUS
ICOMP
VCOMP
FSET
ISNS
VBUSLIM
SW1
EN BD8664GW
BD8665GW
ISETIN1 BD8668GW
ISETIN2
ISETIN3
SW2
ACLEN
PGOOD
VFB
VBUSOK
ISETOUT1
ISETOUT2
FSET
GND PGND
Controled by HOST
SYSTEM
BATTERY+
Figure 1. Typical Application
Circuit
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
1/32
TSZ02201-0A1A0AZ00130-1-2
15.Apr.2015 Rev.001
BD8664GW BD8665GW BD8668GW
Electrical Characteristics - continued
<Input/ Output>
EN/ISETIN1,2,3/ACLEN
L Voltage
VINL
--
EN/ISETIN1,2,3/ACLEN
H Voltage
VINH
2.5 -
ISETIN1,2 Input Current
IINH - 0
EN/ACLEN/ISETIN3
Pull-Down Resistor
RIN2
300 500
ISETOUT1,2 L Voltage
VOUTL
- 0.0
ISETOUT1,2 H Voltage
VOUTH
2.94 3.00
This product has no designed protection against radioactive rays.
Pd is the maximum power. Please keep the current to meet power lower than the Pd.
0.4 V
5.5 V
- μA No Pull-Down, Open Is Not Allowed.
700 kΩ
-V
3.06 V
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
8/32
TSZ02201-0A1A0AZ00130-1-2
15.Apr.2015 Rev.001
BD8664GW BD8665GW BD8668GW
Block Descriptions
1. VBUS Input Detection Comparator Output (VBUSOK)
VBUS voltage can set VBUSOK. 40ms after detecting that VBUS is higher than 4.0V (typ), VBUSOK turns H (3.0V [typ]).
In case VBUS ramps down, and reaches 3.9V (typ), VBUSOK turns L without any delay. The function works
independently from the condition of EN and thermal shut down.
VBUS
< 3.9V (typ)
>= 4.0V (typ)
VBUSOK
L 0.0V (typ)
H 3.0V (typ)
2. Charging ON/OFF (EN)
ON/OFF is controlled with the EN pin. When EN is L, the IC enters shutdown mode (or USB suspend mode), the battery
leakage current is set to 0µA, and all other functions but VBUSOK turns off. EN pin is connected to a 500kΩ (typ)
pull-down resistor.
3. USB Current Setting (ISETIN1,2,3)
ISET1
ISET2
ISET3
VBUS Input Current Settings
L LL
100mA (max)
L LH
500mA (max)
L HL
500mA (max)
L HH
500mA (max)
H LL
900mA (max)
H LH
900mA (max)
H HL
1500mA (max)
H HH
1500mA (max)
Note: Open is NOT allowed for ISETIN1,2 pins. No pull-down resistor is connected to ISETIN1, 2 pins. 500kΩ (typ) pull-down resistor is internally connected
to ISETIN3.
4. VBUS Current Setting (ISETOUT1,2)
ISETOUT1 ISETOUT2
VBUS Current Settings
LL
100mA (max)
LH
500mA (max)
HL
900mA (max)
HH
1500mA (max)
Note: 500kΩ(typ) is connected internally to ISETOUT1,2. Even in the case VBUS=0V, the output stays stable.
5. Frequency Setting (FSET)
The PWM switching frequency can be set.
FSET
100kΩ
47kΩ
33kΩ
22kΩ
PWM
500kHz (typ)
1MHz (typ)
1.5MHz (typ)
2MHz (typ)
6. CV Control Soft-Start
If the system boots up with NO battery, CV control method suppresses the 8.3V (typ) in case of using BD8664GW and
8.4V (typ) in case of using BD8665GW/BD8668GW, on VFB pin, and enters “feeding mode”. In this mode, it will take
40ms (typ) for the VFB to reach 8.4V (typ).
7. Load Switch Function
A PMOS load switch is integrated between VBUSLIM and SW1. When EN=L, the load switch turns off. If a low battery is
connected, charging can be stopped. The integrated load resistors are 20Ω (typ) and 70mΩ (typ). The higher resistance
is connected during start-up. After 10ms (typ), the lower resistance is connected if no short circuit is detected by VFB pin.
8. OCP for Load Switch
Through a sense resistor between VBUS and ISNS, over-current can be detected while the load switch is on. If the
over-current is constantly detected for more than 1ms, the load switch turns off and latches. To unlatch, the IC must be
rebooted by switching EN to low, then back to high; or set VBUS to a voltage lower than UVLO, then back to the
operating VBUS voltage.
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
16/32
TSZ02201-0A1A0AZ00130-1-2
15.Apr.2015 Rev.001
|
|||
页数 | 30 页 | ||
下载 | [ BD8665GW.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
BD8665GW | Boost DC/DC Charger | ROHM Semiconductor |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |