|
|
零件编号 | IRFP048 | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | Vishay | ||
LOGO | |||
1 Page
Power MOSFET
IRFP048, SiHFP048
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
60
VGS = 10 V
110
Qgs (nC)
29
Qgd (nC)
38
Configuration
Single
0.018
TO-247AC
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
TO-247AC
IRFP048PbF
SiHFP048-E3
IRFP048
SiHFP048
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 43 μH, Rg = 25 Ω, IAS = 73 A (see fig. 12).
c. ISD ≤ 72 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package (die current = 73 A).
LIMIT
60
± 20
70
52
290
1.3
200
190
4.5
- 55 to + 175
300
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91198
S11-0447-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Package Information
Vishay Siliconix
TO-247AC (High Voltage)
B
3 R/2
Q
2xR
(2)
4
E
E/2
S
D
A
A2
A
4
A
7 ØP
Ø k M DBM
D2
(Datum B)
ØP1
4
D1
5 L1
12
3
D4
Thermal pad
CL
See view B
A
4
E1
0.01 M D B M
2 x b2
3xb
2x e
b4
0.10 M C A M
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
C
A1
D DE E
CC
Planting
View A - A
(b1, b3, b5)
Base metal
(c) c1
View B
(b, b2, b4)
(4)
Section C - C, D - D, E - E
MILLIMETERS
DIM.
MIN.
MAX.
A 4.58 5.31
A1 2.21 2.59
A2 1.17 2.49
b 0.99 1.40
b1 0.99 1.35
b2 1.53 2.39
b3 1.65 2.37
b4 2.42 3.43
b5 2.59 3.38
c 0.38 0.86
c1 0.38 0.76
D
19.71
20.82
D1 13.08
-
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
INCHES
MIN.
MAX.
0.180
0.209
0.087
0.102
0.046
0.098
0.039
0.055
0.039
0.053
0.060
0.094
0.065
0.093
0.095
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.820
0.515
-
DIM.
D2
E
E1
e
Øk
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51 1.30
15.29
15.87
13.72
-
5.46 BSC
0.254
14.20
16.25
3.71 4.29
7.62 BSC
3.51 3.66
- 7.39
5.31 5.69
4.52 5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
-
0.215 BSC
0.010
0.559
0.640
0.146
0.169
0.300 BSC
0.138
0.144
- 0.291
0.209
0.224
0.178
0.216
0.217 BSC
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
1 Document Number: 91360
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
|||
页数 | 9 页 | ||
下载 | [ IRFP048.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRFP040 | (IRFP040 / IRFP042) N-Channel Power MOSFET | International Rectifier |
IRFP042 | (IRFP040 / IRFP042) N-Channel Power MOSFET | International Rectifier |
IRFP044 | Power MOSFET ( Transistor ) | Power MOSFET |
IRFP044 | Power MOSFET ( Transistor ) | Vishay |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |