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零件编号 | D1224 | ||
描述 | NPN Transistor - 2SD1224 | ||
制造商 | Toshiba | ||
LOGO | |||
1 Page
2SD1224
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington)
2SD1224
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
· Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
30
10
1.5
0.15
1.0
10
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
Equivalent Circuit
BASE
COLLECTOR
EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
1 2002-07-23
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页数 | 5 页 | ||
下载 | [ D1224.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
D1220 | NPN Transistor - 2SD1220 | Toshiba |
D1221 | NPN Transistor - 2SD1221 | Toshiba |
D1223 | NPN Transistor - 2SD1223 | Toshiba Semiconductor |
D1224 | NPN Transistor - 2SD1224 | Toshiba |
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