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PDF ( 数据手册 , 数据表 ) BTS50055-1TMC

零件编号 BTS50055-1TMC
描述 Smart Highside High Current Power Switch
制造商 Infineon Technologies
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BTS50055-1TMC 数据手册, 描述, 功能
Data Sheet BTS50055-1TMC
Smart Highside High Current Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of Vbb protection2)
Electrostatic discharge (ESD) protection
Green product (RoHS compliant)
AEC qualified
Product Summary
Operating voltage
On-state resistance
Noinal current
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(on)
RON
IL(nom)
IL(ISO)
IL(SC)
IL : IIS
PG-TO220-7-4
7
Application
Power switch with current sense diagnostic
1
SM D
feedback for 12 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
Replaces electromechanical relays, fuses and discrete circuits
5.0 ... 34 V
6.0 m
17 A
70 A
130 A
14 000
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
VIS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 8).
Infineon Technologies AG
Page 1of 17
2010-April-27







BTS50055-1TMC pdf, 数据表
Data Sheet BTS50055-1TMC
Overvoltage protection of logic part
+ Vbb
R IN IN
VZ,IN VZ,IS
R bb
Logic
IS
PROFET
VOUT
RIS RV V Z,VIS
Signal GND
Rbb = 120 typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 k
nominal. Note that when overvoltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
Reverse battery protection
Rbb
- Vbb
Vbb disconnect with energized inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 72 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
Version a:
Vbb V bb
IN PROFET OUT
IS
Version b:
VZL
IN Vbb Vbb
RIN Logic
OUT
Power
Transistor
IN PROFET OUT
IS
DS
RL
VZb
IS
D RIS
RV
Signal GND
Power GND
RV 1 kΩ, RIS = 1 knominal. Add RIN for reverse
battery protection in applications with Vbb above
16
V19);
recommended
value:
1
RIN
+
1
RIS
+
1
RV
=
0.1A
1 0.1A
|Vbb| - 12V if DS is not used (or RIN = |Vbb| - 12V if DS is
used).
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through RIS and RV.
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
Version c: Sometimes a neccessary voltage clamp is
given by non inductive loads RL connected to the same
switch and eliminates the need of clamping circuit:
Vbb Vbb R L
IN PROFET OUT
IS
Infineon Technologies AG
Page 8 of 17
2010-April-27







BTS50055-1TMC equivalent, schematic
Data Sheet BTS50055-1TMC
Revision History
Version
Rev. 1.1
Rev. 1.0
Date
2010-04-27
2008-01-24
Changes
Limits of parameter ton changed to min 130µs / max 450µs
Limits of parameter toff changed to min 90µs / max 210µs
Initial version of data sheet.
Green (RoHS compliant) variant of BTS6510B
Infineon Technologies AG
Page 16 of 17
2010-April-27










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