DataSheet8.cn


PDF ( 数据手册 , 数据表 ) ITS436L2

零件编号 ITS436L2
描述 Smart High-Side Power Switch
制造商 Infineon
LOGO Infineon LOGO 


1 Page

No Preview Available !

ITS436L2 数据手册, 描述, 功能
PROFET® ITS436L2
Smart High-Side Power Switch
for Industrial Applications
One Channel: 38m
Status Feedback
Product Summary
Package
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
Operating Temperature
RON
Vbb(on)
IL(NOM)
IL(SCr)
Ta
38m
4.75...41V
9.8A
40A
-30 …+85°C
PG-TO220-5-11
PG-TO220-5-12
Standard
Straight
General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOStechnology.
Providing embedded protective functions
Applications
µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads in
industrial applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Very low standby current
CMOS compatible input
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN Logic
with
protection
ST functions
OUT
Diagnostic Function
Diagnostic feedback with open drain output
Open load detection in ON-state
Feedback of thermal shutdown in ON-state
PROFET
GND
Load
Infineon Technologies AG
Page 1
2006-Mar-28







ITS436L2 pdf, 数据表
PROFET® ITS436L2
GND disconnect with GND pull up
IN
2
4 ST
3
Vbb
PROFET
GND
1
OUT
5
Vbb VIN VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Inductive Load switch-off energy
dissipation
E bb
E AS
IN Vbb
PROFET OUT
= ST
{GND
L
Z L RL
ELoad
EL
ER
Vbb disconnect with energized inductive
load
3
high IN
2
Vbb
4 ST
PROFET
GND
OUT
5
1
Vbb
For inductive
(max. ratings
load
and
currents
diagram
up
on
to the limits defined by
page 8) each switch is
ZL
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 :
EAS=
2IL·R· LL·(Vbb
+
|VOUT(CL)|)·
ln
(1+
IL·RL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0
ZL [mH]
1000
100
10
1
Infineon Technologies AG
0.1
0
2
4 6 10 12 14 16 18
Page 8
IL [A]
2006-Mar-28














页数 12 页
下载[ ITS436L2.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
ITS436L2Smart High-Side Power SwitchInfineon
Infineon
ITS436L2SSmart High-Side Power SwitchInfineon
Infineon

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap