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零件编号 | ITS436L2 | ||
描述 | Smart High-Side Power Switch | ||
制造商 | Infineon | ||
LOGO | |||
1 Page
PROFET® ITS436L2
Smart High-Side Power Switch
for Industrial Applications
One Channel: 38mΩ
Status Feedback
Product Summary
Package
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
Operating Temperature
RON
Vbb(on)
IL(NOM)
IL(SCr)
Ta
38mΩ
4.75...41V
9.8A
40A
-30 …+85°C
PG-TO220-5-11
PG-TO220-5-12
Standard
Straight
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions
Applications
• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads in
industrial applications
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground
Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of Vbb protection
• Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN Logic
with
protection
ST functions
OUT
Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in ON-state
• Feedback of thermal shutdown in ON-state
PROFET
GND
Load
Infineon Technologies AG
Page 1
2006-Mar-28
PROFET® ITS436L2
GND disconnect with GND pull up
IN
2
4 ST
3
Vbb
PROFET
GND
1
OUT
5
Vbb VIN VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Inductive Load switch-off energy
dissipation
E bb
E AS
IN Vbb
PROFET OUT
= ST
{GND
L
Z L RL
ELoad
EL
ER
Vbb disconnect with energized inductive
load
3
high IN
2
Vbb
4 ST
PROFET
GND
OUT
5
1
Vbb
For inductive
(max. ratings
load
and
currents
diagram
up
on
to the limits defined by
page 8) each switch is
ZL
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
∫EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
2IL·R· LL·(Vbb
+
|VOUT(CL)|)·
ln
(1+
IL·RL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
ZL [mH]
1000
100
10
1
Infineon Technologies AG
0.1
0
2
4 6 10 12 14 16 18
Page 8
IL [A]
2006-Mar-28
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页数 | 12 页 | ||
下载 | [ ITS436L2.PDF 数据手册 ] |
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