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零件编号 | ITS4141N | ||
描述 | Smart High-Side Power Switch | ||
制造商 | Infineon | ||
LOGO | |||
1 Page
Smart High-Side Power Switch
for Industrial Applications
1 Channel: 1 x 200mΩ
ITS 4141N
Features
• Short circuit protection
• Current limitation
• Overload protection
• Overvoltage protection
(including load dump)
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Operating temperature
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output
with inductive loads
• CMOS compatible input
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)
Vbb(AZ)
Vbb(on)
RON
Ta
47 V
12...45 V
200 mΩ
-30...+85 °C
PG-SOT223
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC industrial applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1
2006-03-09
Conducted Emission
Acc. IEC 61967-4 (1Ω / 150Ω method)
Typ. Vbb-Pin Emission at DC-On with 150 Ω-matching network
100
90
80
70
60
50
40
30
20
10
0
-1 0
-2 0
0 ,1
1 5 0 o h m C la s s 6
1 5 0 o h m C la s s 1
V B B , n o is e flo o r
VBB, ON
15 0Ω / 8-H
15 0Ω / 13 -N
1 10 100
f / MHz
1000
Typ. Vbb-Pin Emission at PWM-Mode with 150 Ω-matching network
100
90
80
70
60
50
40
30
20
10
0
-1 0
-2 0
0 ,1
1 5 0 o h m C la s s 6
1 5 0 o h m C la s s 1
V B B , n o is e flo o r
VBB, PW M
150 Ω / 8-H
150Ω / 13-N
1 10 100
f / MHz
1000
Test circuit:
5µH
150Ω-Network
Vbb
IN PROFET OUT
GND
5µH
RGND
R
ITS 4141N
For defined decoupling and high reproducibility a defined choke (5µH at 1 MHz)
is inserted between supply and Vbb-pin.
Page 8
2006-03-09
Maximum allowable inductive switch-off
energy, single pulse
EAS = f(IL); Tjstart = 125°C
2.5
J
1.5
1
0.5
00.2 0.4 0.6 0.8 1 A 1.4
IL
Typ. input delay time at switch on Vbb
td(Vbbon) = f(Vbb)
ITS 4141N
Typ. leakage current
IL(off) = f(Tj) ; Vbb = 32V ; VIN ≤ 1,2 V
4
µA
3
2.5
2
1.5
1
0.5
0-40 -20 0 20 40 60 80 100 °C 140
Tj
400
µs
300
250
200
150
100
50
00 5 10 15 20 25 30 35 40 V 50
Vbb
Page 16
2006-03-09
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页数 | 19 页 | ||
下载 | [ ITS4141N.PDF 数据手册 ] |
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