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PDF ( 数据手册 , 数据表 ) 7MBP35VDA120-50

零件编号 7MBP35VDA120-50
描述 IGBT Module
制造商 Fuji Electric
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7MBP35VDA120-50 数据手册, 描述, 功能
http://www.fujielectric.com/products/semiconductor/
7MBP35VDA120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 35A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Collector-Emitter Voltage (*1)
VCES
0
Short Circuit Voltage
VSC 400
DC IC
-
Collector Current
1ms
Icp
-
Duty=100% (*2) -IC
-
Collector Power Dissipation 1 device (*3)
PC
-
Collector Current
DC
1ms
IC
Icp
-
-
Forward Current of Diode
IF
-
Collector Power Dissipation 1 device (*3)
PC
-
Supply Voltage of Pre-Driver (*4)
VCC
-0.5
Input Signal Voltage (*5)
Vin -0.5
Alarm Signal Voltage (*6)
VALM
-0.5
Alarm Signal Current (*7) IALM -
Junction Temperature
Tj -
Operating Case Temperature
Topr
-20
Storage Temperature
Tstg -40
Solder Temperature (*8)
Tsol -
Isolating Voltage (*9)
Viso -
Screw Torque
Terminal (M4)
Mounting (M4)
-
-
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
Max.
1200
800
35
70
35
192
15
30
15
111
20
VCC+0.5
VCC
20
150
110
125
260
AC2500
1.7
Units
V
V
A
A
A
W
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
Nm
1







7MBP35VDA120-50 pdf, 数据表
7MBP35VDA120-50
Brake
Collector current vs. Collector-Emitter voltage
Tj=25[Chip] (typ.)
30
25
VCC=15V
VCC=17V
VCC=13V
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage VCE [ V ]
Collector current vs. Collector-Emitter voltage
Tj=125[Chip] (typ.)
30
25 VCC =15V
VCC =17V
VCC =13V
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage VCE [ V ]
Forward current vs. Forward voltage
[Chip] (typ.)
30
25
Tj=25
Tj=125
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5
Forward voltage VF [ V ]
8
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage
Tj=25[Terminal] (typ.)
30
25
VCC =15V
VCC =17V
VCC =13V
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage VCE [ V ]
Collector current vs. Collector-Emitter voltage
Tj=125[Terminal] (typ.)
30
25
VCC =15V
VCC =17V
VCC =13V
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage VCE [ V ]
Forward current vs. Forward voltage
[Terminal] (typ.)
30
25
Tj=25
Tj=125
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5
Forward voltage VF [ V ]














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