DataSheet8.cn


PDF ( 数据手册 , 数据表 ) 7MBP200VEA120-50

零件编号 7MBP200VEA120-50
描述 IGBT MODULE
制造商 Fuji
LOGO Fuji LOGO 


1 Page

No Preview Available !

7MBP200VEA120-50 数据手册, 描述, 功能
http://www.fujielectric.com/products/semiconductor/
7MBP200VEA120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 200A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Max.
Units
Collector-Emitter Voltage (*1)
VCES
0 1200 V
Short Circuit Voltage
VSC
400 800
V
DC IC
- 200 A
Collector Current
1ms
Icp
- 400 A
Duty=100% (*2) -IC
- 200 A
Collector Power Dissipation 1 device (*3)
PC
- 961 W
Collector Current
DC
1ms
IC
Icp
- 100 A
- 200 A
Forward Current of Diode
IF
- 100 A
Collector Power Dissipation 1 device (*3)
PC
- 581 W
Supply Voltage of Pre-Driver (*4)
VCC
-0.5 20
V
Input Signal Voltage (*5)
Vin
-0.5 VCC+0.5
V
Alarm Signal Voltage (*6)
VALM
-0.5
VCC
V
Alarm Signal Current (*7) IALM - 20 mA
Junction Temperature
Tj - 150 ºC
Operating Case Temperature
Topr
-20 110 ºC
Storage Temperature
Tstg -40 125 ºC
Solder Temperature (*8)
Tsol - 260 ºC
Isolating Voltage (*9)
Viso
-
AC2500
Vrms
Screw Torque
Terminal (M5)
Mounting (M5)
-
- 3.5 Nm
Note *1: VCES shall be applied to the input voltage between all Collector and Emitter. [ P1- (U, V, W ,B), P2- (U, V, W, B), (U ,V ,W ,B)-N1, (U, V, W, B)-N2 ]
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.4, 8, 12 and 19.
Note *8: Immersion time 10±1 sec. 1 time.
Note *9: Terminal to base, 50/60Hz sine wave 1 min. All terminals should be connected together during the test.
1







7MBP200VEA120-50 pdf, 数据表
7MBP200VEA120-50
Brake
200
150
100
Collector current vs. Collector-Emitter voltage
Tj =25[Chip] (typ.)
VCC =15V
VCC =17V
VCC =13V
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage
Tj =25[Terminal] (typ.)
200
VCC =15V
150
VCC =17V
VCC =13V
100
50 50
0
0.0
0.5 1.0 1.5 2.0 2.5 3.0
Collector-Emitter voltage : VCE [ V ]
3.5
Collector current vs. Collector-Emitter voltage
Tj =125[Chip] (typ.)
200
VCC =15V
150
VCC =17V
VCC =13V
100
0
0.0
0.5 1.0 1.5 2.0 2.5 3.0
Collector-Emitter voltage : VCE [ V ]
3.5
Collector current vs. Collector-Emitter voltage
Tj =125[Terminal] (typ.)
200
VCC =15V
150
VCC =17V
VCC =13V
100
50 50
0
0.0
0.5 1.0 1.5 2.0 2.5 3.0
Collector-Emitter voltage : VCE [ V ]
3.5
Forward current vs. Forward voltage
[Chip] (typ.)
200
150 Tj =25
Tj =125
100
0
0.0
0.5 1.0 1.5 2.0 2.5 3.0
Collector-Emitter voltage : VCE [ V ]
3.5
Forward current vs. Forward voltage
[Terminal] (typ.)
200
150 T j =25
T j =125
100
50 50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward voltage : VF [ V ]
8
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward voltage : VF [ V ]














页数 11 页
下载[ 7MBP200VEA120-50.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
7MBP200VEA120-50Power Devices (IGBT)ETC
ETC
7MBP200VEA120-50IGBT MODULEFuji
Fuji

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap