DataSheet8.cn


PDF ( 数据手册 , 数据表 ) VS-10CTQ150-N3

零件编号 VS-10CTQ150-N3
描述 Schottky Rectifier ( Diode )
制造商 Vishay
LOGO Vishay LOGO 


1 Page

No Preview Available !

VS-10CTQ150-N3 数据手册, 描述, 功能
www.vishay.com
VS-10CTQ150PbF, VS-10CTQ150-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 5 A
Base 2
common
cathode
TO-220AB
Anode
2 Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2x5A
150 V
0.73 V
7 mA at 125 °C
175 °C
Common cathode
6.75 mJ
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF 5 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
10
150
620
0.73
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10CTQ150PbF VS-10CTQ150-N3
150 150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 155 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 0.30 A, L = 150 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
5
10
620
115
6.75
0.30
UNITS
A
A
mJ
A
Revision: 22-Aug-11
1 Document Number: 94115
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000












页数 7 页
下载[ VS-10CTQ150-N3.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
VS-10CTQ150-N3Schottky Rectifier ( Diode )Vishay
Vishay

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap