|
|
零件编号 | 2SA1318 | ||
描述 | PNP Transistor | ||
制造商 | Transys | ||
LOGO | |||
1 Page
Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA1318 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 0.5 W (Tamb=25℃)
Collector current
ICM : -0.2
Collector-base voltage
A
V(BR)CBO : -60 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-40V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-1mA
VCE=-6V, IC=-0.1mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-10mA
VCB=-6V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60 V
-50 V
-6 V
-0.1 µA
-0.1 µA
100 560
70
-0.3 V
-1 V
200 MHz
4.5 pF
CLASSIFICATION OF hFE(1)
Rank
R
Range
100-200
Marking
S
140-280
T
200-400
U
280-560
|
|||
页数 | 1 页 | ||
下载 | [ 2SA1318.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
2SA1310 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
2SA1310 | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) | Panasonic Semiconductor |
2SA1312 | TRANSISTOR (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SA1313 | TRANSISITOR (AUDIO FREQUENCY LOW POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER/ SWITCHING APPLICATIONS) | Toshiba Semiconductor |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |