|
|
零件编号 | GA125TS120U | ||
描述 | HALF-BRIDGE IGBT INT-A-PAK | ||
制造商 | International Rectifier | ||
LOGO | |||
1 Page
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50053B
GA125TS120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.2V
@VGE = 15V, IC = 125A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current ➀
Peak Switching Current ➁
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
125
250
250
250
±20
2500
625
325
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂
Weight of Module
Typ.
—
—
0.1
—
—
200
Max.
0.20
0.35
—
4.0
3.0
—
Units
°C/W
N.m
g
1
4/24/2000
GA125TS120U
+Vge
90% Vge
Vce
Ic 10% Vce
td(off)
90% Ic
Ic
5% Ic
tf
∫ t1+5µS
E off = VV cceeicIcdtdt
t1
Fig. 17a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
10% +Vg
G ATE VO LTA G E D .U .T.
+Vg
10% Ic
Vcc
Vce
90% Ic
td(on)
5% Vce
tr
t1
DUT VOLTAGE
AND CURRENT
Ipk
Ic
∫ t2
E on = VVcceeieIcdtdt
t1
t2
Ic
tx
10% Vcc
Vpk
Irr
trr
DIO DE REVE RSE
RECOVERY ENERGY
t3
trr
∫Q rr = iIdcddt t
tx
10% Irr
Vcc
DIODE RECOVERY
W AVEFORMS
∫ t4
E rec = VVddidIcdt dt
t3
t4
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
www.irf.com
|
|||
页数 | 10 页 | ||
下载 | [ GA125TS120U.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
GA125TS120U | HALF-BRIDGE IGBT INT-A-PAK | International Rectifier |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |