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零件编号 | FDS3692 | ||
描述 | N-Channel PowerTrench MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
September 2002
FDS3692
N-Channel PowerTrench® MOSFET
100V, 4.5A, 60mΩ
Features
• rDS(ON) = 50mΩ (Typ.), VGS = 10V, ID = 4.5A
• Qg(tot) = 11nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82745
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
Branding Dash
5
1
2
3
4
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TA = 100oC, VGS = 10V, RθJA = 50oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
Package Marking and Ordering Information
Device Marking
FDS3692
Device
FDS3692
Package
SO-8
Reel Size
330mm
54
63
72
81
Ratings
100
±20
4.5
2.8
Figure 4
171
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/oC
oC
50 oC/W
85 oC/W
25 oC/W
Tape Width
12mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS3692 Rev. B
PSPICE Electrical Model
.SUBCKT FDS3692 2 1 3 ;
Ca 12 8 2.82e-10
Cb 15 14 2.82e-10
Cin 6 8 7.0e-10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 109.7
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 5.61e-9
Ldrain 2 5 1e-9
Lsource 3 7 1.98e-9
RLgate 1 9 56.1
RLdrain 2 5 10
RLsource 3 7 19.8
rev Aug 2002
GATE
1
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
LGATE
RLGATE
-
ESG
6
8
+ EVTHRES
EVTEMP
+ 19 -
8
RGATE + 18 - 6
9 20 22
CIN
S1A
12 13
8
S2A
14
13
15
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
MMED
MSTRO
87
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 28.0e-3
Rgate 9 20 3.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 14.0e-3
Rvthres 22 8 Rvthresmod 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
S1B S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*40),2.5))}
.MODEL DbodyMOD D (IS=2.4E-12 N=1.03 RS=8.2e-3 TRS1=2.1e-3 TRS2=4.7e-7
+ CJO=5.5e-10 M=0.57 TT=3.25e-8 XTI=4.6)
.MODEL DbreakMOD D (RS=1.6 TRS1=2.4e-3 TRS2=-1.0e-5)
.MODEL DplcapMOD D (CJO=1.55e-10 IS=1e-30 N=10 M=0.54)
.MODEL MmedMOD NMOS (VTO=3.8 KP=2.1 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.7)
.MODEL MstroMOD NMOS (VTO=4.3 KP=26 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3.26 KP=0.04 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=37 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.1e-3 TC2=-1.0e-8)
.MODEL RdrainMOD RES (TC1=9.0e-3 TC2=2.9e-5)
.MODEL RSLCMOD RES (TC1=2.5e-3 TC2=2.2e-6)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-4.8e-3 TC2=-1.1e-5)
.MODEL RvtempMOD RES (TC1=-3.0e-3 TC2=1.5e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.0 VOFF=-2.0)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.0 VOFF=-3.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=1.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.0 VOFF=-1.5)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2002 Fairchild Semiconductor Corporation
FDS3692 Rev. B
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页数 | 11 页 | ||
下载 | [ FDS3692.PDF 数据手册 ] |
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