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零件编号 | GN01081B | ||
描述 | GaAs IC with built-in ferroelectric | ||
制造商 | Panasonic Semiconductor | ||
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GaAs MMICs
GN01081B
GaAs IC (with built-in ferroelectric)
Driver amplifier for PCS
s Features
q High output amplifier
q Low distortion
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Power supply voltage
Circuit current
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDD
IDD
Pin
PD
Topr
Tstg
8
100
−5
450
−30 to +90
−40 to +120
Unit
V
mA
dBm
mW
°C
°C
unit: mm
12
1
2
3
4
5
Part B
10
9
8
7
6
11
2-0.55±0.1
2~12˚
Detail of Part A & B
Part A
2.2±0.2
3.4±0.2
2~12˚
0.3±0.1
1: NC
2: VDD2
3: Source2
7: VDD1
8: NC
9: IN1
4: IN2
10: NC
5: NC
11: GND
6: NC
12: GND
ESOF-10D Type Package
s Electrical Characteristics (VDD = 3.0V, f = 1880MHz, Pout = 11.0dBm, Ta = 25 ± 3°C)
Parameter
Symbol Test method
Conditions
min typ max
Circuit current
Power gain
IDD
PG
Adjacent channel
ACP1
leakage power (ACP) 1
Adjacent channel
ACP2
leakage power (ACP) 2
(1)
(1) 22
(1) IS − 95 modulation, ±1.25MHz Detuning
(2) 30kHz Bandwidth
(1) IS − 95 modulation, ±2.25MHz Detuning
(2) 30kHz Bandwidth
60 75
25 27
−56 −51
−71 −66
Test method (1): Measurement circuit is shown in the following diagram.
(2): This item is the sampling guaranteed item.
s Measurement Circuit
5.6nH
20Ω
IN
VDD1
2pF
5.6nH
100pF+1000pF
150Ω
10 9 8 7 6
12 11
12345
OUT
33pF
33nH
100pF
10Ω
100pF+47nF
VDD2
2pF
1.5nH
1.5nH
1pF
Unit
mA
dB
dBc
dBc
1
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页数 | 2 页 | ||
下载 | [ GN01081B.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
GN01081B | GaAs IC with built-in ferroelectric | Panasonic Semiconductor |
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