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零件编号 | STP11N65M5 | ||
描述 | N-channel Power MOSFET | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
STB11N65M5, STD11N65M5, STF11N65M5,
STP11N65M5, STU11N65M5
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET
in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.48 Ω 9 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
TAB
TAB
2
3
1
D2PAK
23
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
Marking
11N65M5
'
3
!-V
Package
D2PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 022864 Rev 2
1/25
www.st.com
25
Electrical characteristics STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Figure 14. Normalized on-resistance vs
temperature
Figure 15. Normalized gate threshold voltage
vs temperature
RDS(on)
(norm)
2.1
1.9
1.7
VGS = 10 V
ID = 4.5 A
AM05460v1
VGS(th)
(norm)
1.10
1.00
VDS = VGS
ID = 250 µA
AM05459v1
1.5
1.3 0.90
1.1
0.9 0.80
0.7
0.5
-50 -25
0
25 50 75 100 TJ(°C)
0.70
-50 -25 0 25 50 75 100 TJ(°C)
Figure 16. Drain-source diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
VSD
(V) TJ=-50°C
1.2
1.0
AM05461v1
VDS
(norm)
1.08
1.06
1.04
ID = 1mA
AM10399v1
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
0
0 10 20 30 40 50 ISD(A)
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25
0
25 50 75 100 TJ(°C)
Figure 18. Switching losses vs gate
resistance(1)
E (μJ)
100
VDD=400V
VGS=10V
ID=6A
Eon
AM15407v1
80
60
40
Eoff
20
0
0 5 10 15 20 25 30 35 40 45 RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/25 Doc ID 022864 Rev 2
Package mechanical data STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Figure 29. TO-220FP drawing
16/25
Doc ID 022864 Rev 2
7012510_Rev_K_B
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页数 | 25 页 | ||
下载 | [ STP11N65M5.PDF 数据手册 ] |
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