|
|
零件编号 | P5803NAG | ||
描述 | N- & P-Channel Enhancement Mode Field Effect Transistor | ||
制造商 | NIKO-SEM | ||
LOGO | |||
1 Page
NIKO-SEM
N- & P-Channel Enhancement Mode
P5803NAG
Field Effect Transistor
TSOP-6
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30V 58mΩ
P-Channel -30V 115mΩ
ID
3A
-2A
DD
D1 S1 D2
GG
SS
6 54
1 23
G1 S2 G2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL N-Channel P-Channel UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
30 -30
±20 ±20
3 -2
2.3 -1.6
30 -10
0.8 0.8
0.5 0.5
-55 to 150
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to- Ambient
RθJA
1Pulse width limited by maximum junction temperature.
Device
N-Ch
P-Ch
TYPICAL
MAXIMUM
160
160
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1 1.2 2.5
P-Ch -1 -1.6 -2.5
V
N-Ch
P-Ch
±100
nA
±100
REV 1.0
1 Dec-17-2010
|
|||
页数 | 7 页 | ||
下载 | [ P5803NAG.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
P5803NAG | N & P-Channel Enhancement Mode MOSFET | UNIKC |
P5803NAG | N- & P-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |