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零件编号 | D818 | ||
描述 | Silicon NPN Power Transistor | ||
制造商 | INCHANGE | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD818
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
·Low Collector Saturation Voltage-
·High Switching Speed
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
MAX
UNIT
.iscsemVCBO
Collector-Base Voltage
1500
V
wwwVCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2.5 A
IE Emitter Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
-2.5 A
50 W
150 ℃
Tstg Storage Temperature Range
-65~150 ℃
isc Website:www.iscsemi.cn
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页数 | 2 页 | ||
下载 | [ D818.PDF 数据手册 ] |
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