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零件编号 | G75EH5 | ||
描述 | High speed 5 IGBT | ||
制造商 | Infineon Technologies | ||
LOGO | |||
1 Page
IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGZ75N65H5
650VIGBThighspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
1000
td(off)
tf
td(on)
tr
100
Highspeedseriesfifthgeneration
IGZ75N65H5
1000
100
10
10
1
0 10 20 30 40 50
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=37.5A,dynamictestcircuitin
Figure E)
td(off)
tf
td(on)
tr
1
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
6.0
typ.
5.5
min.
max.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
9
Eoff
8
Eon
Ets
7
6
5
4
3
2
1
1.0
25
50 75 100 125
Tvj,JUNCTIONTEMPERATURE[°C]
150
0
0 25 50 75 100 125 150 175 200 225
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature
functionofcollectorcurrent
(IC=0.75mA)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=10Ω,RG(off)=18Ω,
8 dynamic test circuit in FiguRreeEv).2.1,2014-10-31
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页数 | 13 页 | ||
下载 | [ G75EH5.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
G75EH5 | High speed 5 IGBT | Infineon Technologies |
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