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PDF ( 数据手册 , 数据表 ) NT4GC72C8PB0NL

零件编号 NT4GC72C8PB0NL
描述 Registered DDR3 SDRAM DIMM
制造商 Nanya Technology
LOGO Nanya Technology LOGO 


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NT4GC72C8PB0NL 数据手册, 描述, 功能
NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ
NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL
NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ
NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600
Registered DDR3 SDRAM DIMM
Based on DDR3-1066/1333 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM B-Die
Based on DDR3-1066 1Gx4 (DDP) (16GB) SDRAM B-Die
Features
•Performance:
Speed Sort
PC3-8500 PC3-10600
-BE -CG Unit
DIMM CAS Latency
79
fck Clock Frequency
533 667 MHz
tck Clock Cycle
1.875
1.5 ns
fDQ DQ Burst Frequency 1066
1333
Mbps
240-Pin Registered Dual In-Line Memory Module (RDIMM)
2GB/4GB: 256Mx72/512Mx72 DDR3 Registered DIMM based on
256Mx8 DDR3 SDRAM B-Die devices
4GB/8GB: 512Mx72/1024Mx72 DDR3 Registered DIMM based
on 512Mx4 DDR3 SDRAM B-Die devices
16GB: 2Gx72 DDR3 Registered DIMM based on 1024Mx4 (DDP)
DDR3 SDRAM B-Die devices
Intended for 533MHz/667MHz applications
• Inputs and outputs are SSTL-15 compatible
VDD = VDDQ = 1.5V ± 0.075V (for DDR3)
VDD = VDDQ = 1.35V -0.0675/+0.1V (for DDR3L)
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
DRAM DLL aligns DQ and DQS transitions with clock transitions.
Address and control signals are fully synchronous to positive
clock edge
Nominal and Dynamic On-Die Termination support
• Programmable Operation:
- DIMM  Latency: 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
Two different termination values (Rtt_Nom & Rtt_WR)
15/10/1 (row/column/rank) Addressing for 2GB
15/11/1 (row/column/rank) Addressing for 4GB (512Mx4 Device)
15/10/2 (row/column/rank) Addressing for 4GB (256Mx8 Device)
15/11/2 (row/column/rank) Addressing for 8GB
15/11/4 (row/column/rank) Addressing for 16GB
Extended operating temperature rage
Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
SDRAMs are in 78-ball BGA Package
RoHS compliance and Halogen free
Description
NT2GC72B89B0NJ, NT2GC72B89B2NJ, NT2GC72C89B0NJ, NT2GC72C89B2NJ, NT4GC72B4PB0NL, NT4GC72C4PB0NL,
NT4GC72C4PB2NL, NT4GC72B8PB0NL ,NT4GC72C8PB0NL , NT4GC72C8PB2NL, NT8GC72B4NB1NJ,
NT8GC72B4NB3NJ ,NT8GC72C4NB1NJ, NT8GC72C4NB3NJ, NT16TC72B4NB1NL, NT16TC72C4NB1NL and NT16TC72C4NB3NL
are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Registered Dual In-Line Memory Module, organized as one rank of
256Mx72 (2GB), one rank or two ranks of 512Mx72 (4GB), two ranks of 1Gx72 (8GB) and four ranks of 2Gx72 (16GB) high-speed memory
array. Modules use nine 256Mx8 (2GB) 78-ball BGA packaged devices, eighteen 256Mx8 (4GB) 78-ball BGA packaged devices, thirty-six
512Mx4 (8GB) 78-ball BGA packaged devices and thirty-six 1Gx4 (DDP) (16GB) 78-ball BGA packaged devices. These DIMMs are
manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes
electrical variation between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25”
long space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of
1066Mbps/1333Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A14 and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.2
12/2010
1
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.







NT4GC72C8PB0NL pdf, 数据表
NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ
NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL
NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ
NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600
Registered DDR3 SDRAM DIMM
Functional Block Diagram (Part 2 of 2)
[4GB 2 Ranks, 256Mx8 DDR3 SDRAMs]


BA[2:0]
A[14:0]



CKE0
CKE1
ODT0
ODT1
CK0

120Ω
±1%
CK1

120Ω
±5%




RBA[2:0]A
RBA[2:0]B
RA[14:0]A
RA[14:0]B






RCKE0A
RCKE0B
RCKE1A
RCKE1B
RODT0A
RODT0B
RODT1A
RODT1B
PCK0A
PCK0B
PCK1A
PCK1B




: SDRAMs D[3:0], D8
: SDRAMs D[7:4]
: SDRAMs D[12:9], D17
: SDRAMs D[16:13]
BA[2:0]: SDRAMs D[3:0], D[12:8], D17
BA[2:0]: SDRAMs D[7:4], D[16:13]
A[14:0]: SDRAMs D[3:0], D[12:8], D17
A[14:0]: SDRAMs D[7:4], D[16:13]
: SDRAMs D[3:0], D[12:8], D17
: SDRAMs D[7:4], D[16:13]
: SDRAMs D[3:0], D[12:8], D17
: SDRAMs D[7:4], D[16:13]
: SDRAMs D[3:0], D[12:8], D17
: SDRAMs D[7:4], D[16:13]
CKE0: SDRAMs D[3:0], D8
CKE0: SDRAMs D[7:4]
CKE1: SDRAMs D[12:9], D17
CKE1: SDRAMs D[16:13]
ODT0: SDRAMs D[3:0], D8
ODT0: SDRAMs D[7:4]
ODT1: SDRAMs D[12:9], D17
ODT1: SDRAMs D[16:13]
CK: SDRAMs D[3:0], D8
CK: SDRAMs D[7:4]
CK: SDRAMs D[12:9], D17
CK: SDRAMs D[16:13]
: SDRAMs D[3:0], D8
: SDRAMs D[7:4]
: SDRAMs D[12:9], D17
: SDRAMs D[16:13]
PAR_IN




: SDRAMs D[17:0]
REV 1.2
12/2010
8
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.







NT4GC72C8PB0NL equivalent, schematic
NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ
NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL
NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ
NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600
Registered DDR3 SDRAM DIMM
Functional Block Diagram (Part 2 of 5)
[16GB 4 Ranks, 1Gx4 (DDP) DDR3 SDRAMs]
VSS
DQS17

VSS
CB[7:4]
ZQ
DQS

DM
DQ[3:0]
D27
VSS
ZQ
DQS

DM
DQ[3:0]
D26
VSS
ZQ
DQS

DM
DQ[3:0]
D63
VSS
ZQ
DQS

DM
DQ[3:0]
D62
VSS
DQS12

VSS
DQ[31:28]
ZQ
DQS

DM
DQ[3:0]
D25
VSS
ZQ
DQS

DM
DQ[3:0]
D24
VSS
ZQ
DQS

DM
DQ[3:0]
D65
VSS
ZQ
DQS

DM
DQ[3:0]
D64
VSS
DQS11

VSS
DQ[23:20]
ZQ
DQS

DM
DQ[3:0]
D23
VSS
ZQ
DQS

DM
DQ[3:0]
D22
VSS
ZQ
DQS

DM
DQ[3:0]
D67
VSS
ZQ
DQS

DM
DQ[3:0]
D66
VSS
DQS10

VSS
DQ[15:12]
ZQ
DQS

DM
DQ[3:0]
D21
VSS
ZQ
DQS

DM
DQ[3:0]
D20
VSS
ZQ
DQS

DM
DQ[3:0]
D69
VSS
ZQ
DQS

DM
DQ[3:0]
D68
VSS
DQS9

VSS
DQ[7:4]
ZQ
DQS

DM
DQ[3:0]
D19
VSS
ZQ
DQS

DM
DQ[3:0]
D18
VSS
ZQ
DQS

DM
DQ[3:0]
D71
VSS
ZQ
DQS

DM
DQ[3:0]
D70
Vtt
REV 1.2
12/2010
16
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.










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