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零件编号 | KP1000A | ||
描述 | HIGH POWER THYRISTOR | ||
制造商 | ETC | ||
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1 Page
KP1000A/2800V
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HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
. All Diffused Structure
. Center Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
KP1000A 2800
2800
2900
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM
dV/dt (4)
10 mA
100 mA (3)
500 V/µsec
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
Conducting - on state
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cPSTCle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5)
Symbol Min.
IT(AV)
ITRMS
ITSM
I2t
IL
IH
VTM
di/dt
Max. Typ.
1000
2000
20000
18000
1.7x106
800
400
2.15
200
Units
A
A
Conditions
Tc=93oC
Nominal value
A 8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A 10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A2s 8.3 msec and 10.0 msec
mA VD = 24 V; RL= 12 ohms
mA VD = 24 V; I = 2.5 A
V ITM = 3200 A;
A/µs Switching from VDRM ≤ 1000 V,
non-repetitive
KP1000A/2800V
Gating
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页数 | 3 页 | ||
下载 | [ KP1000A.PDF 数据手册 ] |
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