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PDF ( 数据手册 , 数据表 ) STU310DH

零件编号 STU310DH
描述 Dual Enhancement Mode Field Effect Transistor
制造商 SamHop
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STU310DH 数据手册, 描述, 功能
S TU310DH
S amHop Microelectronics C orp.
May,28,2007
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID R DS (ON) ( m W ) Max
20 @ VGS = 10V
30V 19A
28 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
-30V
ID
-15A
R DS (ON) ( m W ) Max
30 @ VGS = -10V
44 @ VGS = -4.5V
D1/D2
D1 D2
S1 G1
S2 G2
TO-252-4L
G1 G2
S 1 N-ch
S 2 P-ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS 30 -30
V
Gate-S ource Voltage
VGS 20 20
V
Drain C urrent-C ontinuous @ Tc
-P ulsed a
25 C
70 C
ID
IDM
19 -15
17 -13
50 -50
A
A
A
Drain-S ource Diode Forward C urrent
IS 10 -6
A
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
Tc= 25 C
Tc= 70 C
PD
TJ, TSTG
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
Thermal R esistance, Junction-to-Ambient
R JA
1
11
7.7
-55 to 175
13.6
120
W
C
C /W
C /W







STU310DH pdf, 数据表
S TU310DH
1.3
1.2 V DS =V GS
ID=-250uA
1.1
1.0
0.9
0.8
6 0.7
0.6
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
78
ID=-6A
65
52
125 C
39
26 75 C
25 C
13
0
0 2 4 6 8 10
-V G S , G ate- S ource Voltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
1.15
ID=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
125 C
10.0
25 C
75 C
1.0
0 0.25 0.50 0.75 1.00 1.25
-V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
8














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