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PDF ( 数据手册 , 数据表 ) STU303S

零件编号 STU303S
描述 P-Channel Enhancement Mode Field Effect Transistor
制造商 SamHop Microelectronics
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STU303S 数据手册, 描述, 功能
S TU/D303S
S amHop Microelectronics C orp.
Nov,16, 2007
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ω ) Max
-30V -24A
28 @ VGS = -10V
40 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rocteced
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TU S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Tc=25 C
-P ulsed a
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-30
20
-24
-96
-20
50
-55 to 175
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W
1







STU303S pdf, 数据表
S TU/D303S
TO-251 Tube
TO251 Tube/TO-252 Tape and Reel Data
" A"
TO-252 Carrier Tape
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.80
²0.1
B0
10.3
²0.1
TO-252 Reel
K0 D0
2.50
²0.1
ӿ2
D1
ӿ1.5
+ 0.1
-0
E E1 E2 P0
16.0 1.75 7.5 8.0
0.3² 0.1² ²0.15 ²0.1
P1 P2
T
4.0 2.0 0.3
²0.1 ²0.15 ²0.05
S
UNIT:р
TAPE SIZE REEL SIZE
M
NW
T
H
K
S
G
R
V
16 р
ӿ 330
ӿ330 ӿ97
² 0.5 ² 1.0
17.0
+ 1.5
-0
2.2
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
8














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