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PDF ( 数据手册 , 数据表 ) H55S5132EFR

零件编号 H55S5132EFR
描述 512Mbit (16Mx32bit) Mobile SDR Memory
制造商 Hynix Semiconductor
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H55S5132EFR 数据手册, 描述, 功能
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of
512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / Sep. 2010
1







H55S5132EFR pdf, 数据表
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature . Time
il;o;nar
512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122EFR Series / H55S5132EFR Series
Symbol
TA
TSTG
VIN, VOUT
VDD
VDDQ
IOS
PD
TSOLDER
Rating
-30 ~ 85
-55 ~ 125
-1.0 ~ 2.6
-1.0 ~ 2.6
-1.0 ~ 2.6
50
1
260 . 20
Unit
oC
oC
V
V
V
mA
W
oC . Sec
DC OPERATING CONDITION (TA= -30 to 85oC)
Parameter
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min
Typ
Max
Unit
Note
VDD
1.7
1.8
1.95 V
1
VDDQ
1.7 1.8 1.95 V 1, 2
VIH
0.8*VDDQ
-
VDDQ+0.3
V
1, 2
VIL -0.3 - 0.3 V 1, 2
Note:
1. All Voltages are referenced to VSS = 0V
2. VDDQ must not exceed the level of VDD
AC OPERATING TEST CONDITION (TA= -30 to 85 oC, VDD = 1.8V, VSS = 0V)
Parameter
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
0.9*VDDQ/0.2
0.5*VDDQ
1
0.5*VDDQ
30
Unit
V
V
ns
V
pF
Note
Rev 1.2 / Sep. 2010
8







H55S5132EFR equivalent, schematic
il;o;nar
512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122EFR Series / H55S5132EFR Series
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1 BA0 A12 A11 A10
00000
A9
OP Code
(A13 is used for Reduced Page Size)
A8 A7 A6 A5 A4 A3 A2 A1 A0
00
CAS Latency BT Burst Length
OP Code
A9
0
1
Write Mode
Burst Read and Burst Write
Burst Read and Single Write
Burst Type
A3 Burst Type
0 Sequential
1 Interleave
CAS Latency
A6 A5 A4
000
001
010
011
100
101
110
111
CAS Latency
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
Burst Length
A2 A1 A0
00 0
00 1
01 0
01 1
10 0
10 1
1 10
1 11
Burst Length
A3 = 0
A3=1
11
22
44
88
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Full page
Reserved
Rev 1.2 / Sep. 2010
16










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