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零件编号 | H57V2622GMR-60X | ||
描述 | 256Mb Dual Die Synchronous DRAM | ||
制造商 | Hynix Semiconductor | ||
LOGO | |||
1 Page
256Mb : x32 Dual Die Synchronous DRAM
www.DataSheet4U.com
256M (8Mx32bit) Hynix SDRAM
Memory
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Oct. 2009
1
111www.DataSheet4U.com
Synchronous DRAM Memory 256Mbit
H57V2622GMR Series
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature (Commercial Temp.)
Ambient Temperature (Industrial Temp.)
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD supply relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature . Time
Symbol
TA
TSTG
VIN, VOUT
VDD, VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-40 ~ 85
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 . 10
Unit
oC
oC
oC
V
V
mA
W
oC . Sec
DC OPERATING CONDITION (Commercial : TA = 0~70℃, Industrial : TA = -40~85℃)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VDD, VDDQ
VIH
VIL
Min
Max
Unit
3.0 3.6 V
2.0
VDDQ + 0.3
V
-0.3 0.8 V
Note
1
1, 2
1, 3
Note:
1. All voltages are referenced to VSS = 0V.
2. VIH(Max) is acceptable VDDQ + 2V for a pulse width with <= 3ns of duration.
3. VIL(min) is acceptable -2.0V for a pulse width with <= 3ns of duration.
AC OPERATING TEST CONDITION
(Commercial : TA = 0~70℃, Industrial : TA = -40~85℃, VDD=3.3±0.3V / VSS=0V)
Parameter
Symbol
Value
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
VIH / VIL
Vtrip
2.4 / 0.4
0.5 x VDDQ
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
tR / tF
Voutref
CL
1
0.5 x VDDQ
50
Note:
1. See Next Page
Unit
V
V
ns
V
pF
Note
1
Rev 1.0 / Oct. 2009
8
111www.DataSheet4U.com
Synchronous DRAM Memory 256Mbit
H57V2622GMR Series
CURRENT STATE TRUTH TABLE (Sheet 1 of 4)
Current
State
idle
Row
Active
Read
Command
CS RAS CAS WE
BA0/
BA1
Amax-A0
LL L L
OP CODE
LL LH X
X
L L H L BA
X
L L H H BA
Row Add.
L H L L BA
LH L H
LHHH
BA
X
Col Add.
A10
Col Add.
A10
X
HX X X
X
X
LL L L
LL LH
LLHL
LL HH
LH L L
LH L H
LHHH
HX X X
LL L L
LL LH
OP CODE
XX
BA X
BA Row Add.
BA
Col Add.
A10
BA
Col Add.
A10
XX
XX
OP CODE
XX
L L H L BA
X
LL HH
LH L L
BA
BA
LH L H
LHHH
BA
X
Row Add.
Col Add.
A10
Col Add.
A10
X
Description
Action
Notes
Mode Register Set
Auto or Self Refresh
Precharge
Bank Activate
Set the Mode Register
Start Auto or Self Refresh
No Operation
Activate the specified
bank and row
5
Write/WriteAP
ILLEGAL
4
Read/ReadAP
ILLEGAL
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
No Operation
No Operation or Power
Down
ILLEGAL
ILLEGAL
Precharge
ILLEGAL
Start Write : optional
AP(A10=H)
Start Read : optional
AP(A10=H)
No Operation
No Operation
ILLEGAL
ILLEGAL
Termination Burst: Start
the Precharge
ILLEGAL
Termination Burst: Start
Write(optional AP)
Termination Burst: Start
Read(optional AP)
Continue the Burst
4
3
3
13
13
7
4
6
6
13
13
4
8,9
8
Rev 1.0 / Oct. 2009
16
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页数 | 23 页 | ||
下载 | [ H57V2622GMR-60X.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
H57V2622GMR-60X | 256Mb Dual Die Synchronous DRAM | Hynix Semiconductor |
H57V2622GMR-60X | 256Mb Dual Die Synchronous DRAM | Hynix Semiconductor |
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