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零件编号 | AP02N40I-HF | ||
描述 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
制造商 | Advanced Power Electronics | ||
LOGO | |||
1 Page
Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
AP02N40I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
400V
RDS(ON)
5Ω
G ID 1.6A
S
Description
AP02N40 uses rugged design with the best combination of fast
switching and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
+30
1.6
1
3
27.8
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.5
65
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
℃/W
Data & specifications subject to change without notice
1
201101051
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页数 | 4 页 | ||
下载 | [ AP02N40I-HF.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
AP02N40I-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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