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零件编号 | AP22T03GH-HF | ||
描述 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
制造商 | Advanced Power Electronics | ||
LOGO | |||
1 Page
Advanced Power
Electronics Corp.
AP22T03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
33mΩ
15.6A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=70℃
IDM
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
15.6
9.8
50
12.5
2
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
10
62.5
Units
V
V
A
A
A
W
W
℃
℃
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
200912221
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页数 | 4 页 | ||
下载 | [ AP22T03GH-HF.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
AP22T03GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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