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零件编号 | ME12N04 | ||
描述 | N-Channel 40-V (D-S) MOSFET | ||
制造商 | Matsuki | ||
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1 Page
N- Channel 40-V (D-S) MOSFET
ME12N04/ME12N04-G
GENERAL DESCRIPTION
The ME12N04 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(TO-252-3L)
Top View
FEATURES
● RDS(ON)=28mΩ@VGS=10V (N-Ch)
● RDS(ON)=52mΩ@VGS=4.5V (N-Ch)
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● LCD Display inverter
e Ordering Information: ME12N04 (Pb-free)
ME12N04-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TC=25℃
TC=70℃
TC=25℃
TC=70℃
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
RθJC
Maximum Ratings
40
±25
22
18
80
25
16
-55 to 150
42
5
Unit
V
V
A
A
W
℃
℃/W
℃/W
Mar, 2012-Ver2.2
01
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页数 | 5 页 | ||
下载 | [ ME12N04.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
ME12N04 | N-Channel 40-V (D-S) MOSFET | Matsuki |
ME12N04-G | N-Channel 40-V (D-S) MOSFET | Matsuki |
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