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PDF ( 数据手册 , 数据表 ) ME12N04

零件编号 ME12N04
描述 N-Channel 40-V (D-S) MOSFET
制造商 Matsuki
LOGO Matsuki LOGO 


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ME12N04 数据手册, 描述, 功能
N- Channel 40-V (D-S) MOSFET
ME12N04/ME12N04-G
GENERAL DESCRIPTION
The ME12N04 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(TO-252-3L)
Top View
FEATURES
RDS(ON)=28m@VGS=10V (N-Ch)
RDS(ON)=52m@VGS=4.5V (N-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
e Ordering Information: ME12N04 (Pb-free)
ME12N04-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TC=25
TC=70
TC=25
TC=70
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
RθJC
Maximum Ratings
40
±25
22
18
80
25
16
-55 to 150
42
5
Unit
V
V
A
A
W
℃/W
℃/W
Mar, 2012-Ver2.2
01












页数 5 页
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