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零件编号 | TK10A60E | ||
描述 | MOSFETs | ||
制造商 | Toshiba Semiconductor | ||
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1 Page
MOSFETs Silicon N-Channel MOS (π-MOS)
TK10A60E
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK10A60E
TO-220SIS
1: Gate
2: Drain
3: Source
1 2013-02-13
Rev.2.0
Package Dimensions
TK10A60E
Unit: mm
Weight: 1.7 g (typ.)
TOSHIBA: 2-10U1S
Nickname: TO-220SIS
Package Name(s)
8 2013-02-13
Rev.2.0
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页数 | 9 页 | ||
下载 | [ TK10A60E.PDF 数据手册 ] |
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