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零件编号 | RQ3E160AD | ||
描述 | Nch 30V 16A Middle Power MOSFET | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
RQ3E160AD
Nch 30V 16A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
4.5mΩ
±16A
2W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package.
4) Pb-free lead plating ; RoHS compliant
lOutline
HSMT8
lInner circuit
Datasheet
lApplication
Switching
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
330
12
3000
TB
E160AD
Symbol
VDSS
ID*1
ID,pulse*2
VGSS
EAS*3
IAS*3
PD*4
Tj
Tstg
Value
30
±16
±64
±20
23
16
2
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
℃
℃
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20140821 - Rev.001
RQ3E160AD
lElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Datasheet
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
8/11
20140821 - Rev.001
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页数 | 12 页 | ||
下载 | [ RQ3E160AD.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
RQ3E160AD | Nch 30V 16A Middle Power MOSFET | ROHM Semiconductor |
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