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零件编号 | TJ60S04M3L | ||
描述 | MOSFETs | ||
制造商 | Toshiba Semiconductor | ||
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1 Page
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ60S04M3L
1. Applications
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TJ60S04M3L
DPAK+
1: Gate
2: Drain (heatsink)
3: Source
Start of commercial production
2011-03
1 2014-08-04
Rev.4.0
Package Dimensions
TJ60S04M3L
Unit: mm
Weight: 0.36 g (typ.)
TOSHIBA: 2-7M1A
Nickname: DPAK+
Package Name(s)
8
2014-08-04
Rev.4.0
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页数 | 9 页 | ||
下载 | [ TJ60S04M3L.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
TJ60S04M3L | MOSFETs | Toshiba Semiconductor |
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