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零件编号 | IXGQ90N33TC | ||
描述 | IGBTs | ||
制造商 | IXYS Corporation | ||
LOGO | |||
1 Page
Trench Gate,
High Speed,
IGBTs
For PDP Applications
IXGA90N33TC
IXGQ90N33TC
IXGQ90N33TCD1
IVCCPES
VCE(sat)
=
=
≤
330V
360A
1.80V
90N33TC 90N33TCD1
Symbol
VCES
VGES
VGEM
IC25
IC(RMS)
IICC1P10
ICP
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TLeC=ad25C°uCrr(eCnht iLpimCiat pability)
TTCC
= 110°C
< 150°C, tp < 10μs
TC < 150°C, tp < 10μs, Duty cycle < 1%
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-3P)
TO-263
TO-3P
Maximum Ratings
330
±20
±30
90
75
38
60
360
V
V
V
A
A
A
A
A
200
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
5.5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
VGE = 15V, IC = 20A, Note 1
IC = 45A
TJ = 125°C
IC = 90A
TJ = 125°C
Characteristic Values
Min. Typ. Max.
330 V
3.0 5.0 V
1 μA
200 μA
±200 nA
1.54
1.54
1.82
1.95
1.40 V
1.80 V
V
V
V
TO-263 AA (IXGA)
G
E
C (Tab)
TO-3P (IXGQ)
G
C
E
G = Gate
E = Emitter
C (Tab)
C = Collector
Tab = Collector
Features
• Low VCE(sat)
- for minimum On-State Conduction
Losses
• Fast Switching
Applications
• PDP Screen Drivers
© 2011 IXYS CORPORATION, All Rights Reserved
DS99754B (07/11)
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页数 | 5 页 | ||
下载 | [ IXGQ90N33TC.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IXGQ90N33TC | IGBTs | IXYS Corporation |
IXGQ90N33TCD1 | IGBTs | IXYS Corporation |
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