DataSheet8.cn


PDF ( 数据手册 , 数据表 ) NX3020NAKS

零件编号 NX3020NAKS
描述 MOSFET ( Transistor )
制造商 NXP Semiconductors
LOGO NXP Semiconductors LOGO 


1 Page

No Preview Available !

NX3020NAKS 数据手册, 描述, 功能
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
11 November 2013
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - 30 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1] - - 180 mA
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
Scan or click this QR code to view the latest information for this product







NX3020NAKS pdf, 数据表
NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
0.4
ID
(A)
0.3
017aaa667
0.2
0.1
Tj = 150 °C
Tj = 25 °C
2.5
a
2.0
1.5
1.0
0.5
017aaa668
0
012
VDS > ID × RDSon
34
VGS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60 0 60 120 180
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
2.0
VGS(th)
(V)
1.5
1.0
0.5
max
typ
min
017aaa669
102
C
(pF)
10
1
017aaa670
Ciss
Coss
Crss
0
-60 0 60
ID = 0.25 mA; VDS = VGS
120 180
Tj (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10-1
10-1
1
f = 1 MHz; VGS = 0 V
10 102
VDS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
NX3020NAKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 November 2013
© NXP N.V. 2013. All rights reserved
8 / 15














页数 15 页
下载[ NX3020NAKS.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
NX3020NAKsingle N-channel Trench MOSFETNXP Semiconductors
NXP Semiconductors
NX3020NAKSMOSFET ( Transistor )NXP Semiconductors
NXP Semiconductors
NX3020NAKTMOSFET ( Transistor )NXP Semiconductors
NXP Semiconductors
NX3020NAKVdual N-channel Trench MOSFETNXP Semiconductors
NXP Semiconductors

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap