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零件编号 | MTB1D7N03E3 | ||
描述 | N-Channel Enhancement Mode Power MOSFET | ||
制造商 | Cystech Electonics | ||
LOGO | |||
1 Page
CYStech Electronics Corp.
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB1D7N03E3 BVDSS
ID @VGS=10V
RDSON(TYP) @ VGS=10V, ID=30A
RDSON(TYP) @ VGS=4.5V, ID=20A
30V
203A
2mΩ
2.6mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTB1D7N03E3
Outline
TO-220
G:Gate
D:Drain
S:Source
GDS
Ordering Information
Device
Package
Shipping
MTB1D7N03E3-0-UB-S
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB1D7N03E3
CYStek Product Specification
CYStech Electronics Corp.
TO-220 Dimension
Marking:
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date :
Page No. : 8/8
Device Name
Date Code
B1D7
N03
□□□□
123
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
Millimeters
Min. Max.
A 4.470 4.670
A1 2.520 2.820
b 0.710 0.910
b1 1.170 1.370
c 0.310 0.530
c1 1.170 1.370
D 10.010 10.310
E 8.500 8.900
Inches
Min. Max.
0.176 0.184
0.099 0.111
0.028 0.036
0.046 0.054
0.012 0.021
0.046 0.054
0.394 0.406
0.335 0.350
*: Typical
DIM
Millimeters
Min. Max.
Inches
Min. Max.
E1 12.060 12.460 0.475 0.491
e 2.540*
0.100*
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB1D7N03E3
CYStek Product Specification
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页数 | 8 页 | ||
下载 | [ MTB1D7N03E3.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MTB1D7N03E3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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