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零件编号 | NCE55H12 | ||
描述 | N-Channel Enhancement Mode Power MOSFET | ||
制造商 | NCE Power Semiconductor | ||
LOGO | |||
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http://www.ncepower.com
Pb Free Product
NCE55H12
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE55H12 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =55V,ID =120A
RDS(ON) < 5.5mΩ @ VGS=10V
(Typ:4.1mΩ)
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE55H12
NCE55H12
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
55
±20
120
85
420
200
1.33
1100
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2
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页数 | 7 页 | ||
下载 | [ NCE55H12.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
NCE55H11 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE55H12 | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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