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零件编号 | HN27C256AG-12 | ||
描述 | 32768-word x 8-bit UV Erasable and Programmable ROM | ||
制造商 | Hitachi Semiconductor | ||
LOGO | |||
1 Page
HN27C256AG Series
32768-word × 8-bit UV Erasable and Programmable ROM
Maintenance only
Description
This Hitachi HN27C256AG is a 256-kbit ultraviolet erasable and electrically programmable ROM, featuring
high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry
technique, the HN27C256AG makes high speed access time possible for 16 bit microprocessors such as the
8086 and 68000. And low power dissipation in active and standby modes matches our CMOS 256-kbit
EPROM. In programming operation, the HN27C256AG realizes faster programming times than our
conventional 256-kbit EPROM by Hitachi’s Fast High-Reliability Programming Algorithm. Pin arrangement,
pin configuration and programming voltage are compatible with our 256-kbit EPROM series, therefore
existing programmers can be used with the HN27C256AG.
Features
• High speed
Access time: 100/120/150 ns (max)
• Low power dissipation
Active mode: 25 mW (typ) (f = 1 MHz)
Standby mode: 5 µW (typ)
• High reliability and fast programming
Programming voltage: +12.5 V DC
Fast High-Reliability Programming Algorithm available
• Device identifier mode
Manufacturer code and device code
Ordering Information
Type No.
HN27C256AG-10
HN27C256AG-12
HN27C256AG-15
Access Time
100 ns
120 ns
150 ns
Package
600-mil 28-pin cerdip (DG-28)
Note: This device is not available for new application.
HN27C256AG Series
DC Characteristics (Ta = 25°C ± 5°C, VCC = 6 V ± 0.25 V, VPP = 12.5 V ± 0.5 V)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input leakage current
ILI — — 2
µA Vin = 0 V to VCC
VPP supply current
IPP — — 30 mA CE = VIL
Operating VCC current
ICC — — 30 mA
Input low level
VIL
–0.1*5
—
0.8
V
Input high level
VIH 2.2 —
VCC + 0.5*6 V
Output low voltage during verify VOL
—
—
0.45 V
IOL = 2.1 mA
Output high voltage during verify VOH 2.4 —
—
V
IOH = –400 µA
Notes: 1. VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
2. VPP must not exceed 13.5 V including overshoot.
3. An influence may be had upon device reliability if the device is installed or removed while VPP = 12.
5V.
4. Do not alter VPP either VIL to 12.5 V or 12.5 V or 12.5 V to VIL when CE = Low.
5. VIL min = –0.6 V for pulse width ≤ 20 ns.
6. If VIH is over the specified maximum value, programming operation cannot be guaranteed.
HN27C256AG Series
Package Dimensions
HN27C256AG Series (DG-28)
36.83
38.10 Max
28
φ 8.89
1 1.32
2.54 Max
15
14
2.54 ± 0.25
0.48 ± 0.10
Unit: mm
15.24
0 – 15°
0.25
+
–
0.11
0.05
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页数 | 16 页 | ||
下载 | [ HN27C256AG-12.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
HN27C256AG-10 | 32768-word x 8-bit UV Erasable and Programmable ROM | Hitachi Semiconductor |
HN27C256AG-12 | 32768-word x 8-bit UV Erasable and Programmable ROM | Hitachi Semiconductor |
HN27C256AG-15 | 32768-word x 8-bit UV Erasable and Programmable ROM | Hitachi Semiconductor |
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