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零件编号 | R5007ANJ | ||
描述 | 10V Drive Nch MOSFET | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
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10V Drive Nch MOSFET
R5007ANJ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zDimensions (Unit : mm)
LPTS
10.1
4.5 1.3
1.24
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Each lead has same dimensions
zApplications
Switching
zInner circuit
zPackaging specifications
Package
Code
Type Basic ordering unit (pieces)
R5007ANJ
Taping
TL
1000
(1)
(1) Gate
(2) Drain
(3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP
IS
ISP
∗3
∗1
∗3
∗1
Avalanche Current
IAS ∗2
Avalanche Energy
EAS ∗2
Total power dissipation (Tc=25°C)
PD
Channel temperature
Tch
Range of storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
500
±30
±7
±28
7
28
3.5
3.5
40
150
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
3.13
Unit
°C/W
∗1
(2) (3)
∗1 Body Diode
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.02 - Rev.A
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页数 | 6 页 | ||
下载 | [ R5007ANJ.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
R5007ANJ | 10V Drive Nch MOSFET | ROHM Semiconductor |
R5007ANX | 10V Drive Nch MOSFET | ROHM Semiconductor |
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