|
|
零件编号 | L8550 | ||
描述 | TO-92 Plastic-Encapsulate Transistors | ||
制造商 | LRC | ||
LOGO | |||
1 Page
LESHAN RADIO COMPANY, LTD.
TO-92 Plastic-Encapsulate Transistors
L8550 TRANSISTOR˄ PNP ˅
üTO 92
FEATURES
Power dissipation
PCM : 1
W
˄Tamb=25ć˅
Collector current
ICM: -1.5 A
Collector-base voltage
V(BR)CBO :- 40 V
Operating and storage junction temperature range
TJˈTstg: -55ć to +150ć
˄ ćELECTRICAL CHARACTERISTICS Tamb=25
unless
1.EMITTER
2. BASE
3. COLLECTOR
123
˅otherwise specified
Parameter
Symbol
Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= -100 A ˈ IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO
IC= -0.1 mA , IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100 Aˈ IC=0
-5
V
Collector cut-off current
ICBO VCB= -40 V , IE=0
-0.1 A
Collector cut-off current
ICEO VCE= -20 V , IE=0
-0.1 A
Emitter cut-off current
IEBO VEB= -5 V , IC=0
-0.1 A
DC current gain
hFE˄1˅
hFE˄2˅
VCE= -1V , IC=-100 mA
VCE=-1V , IC=-800 mA
85
40
300
Collector-emitter saturation voltage
VCE(sat)
IC=-800 m,IB=-80 mA
-0.5 V
Base-emitter saturation voltage
VBE(sat)
IC=-800mA,IB=-80 mA
-1.2 V
Transition frequency
VCE=-10 V, IC=-50mA
fT
f =30 MHz
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
L8550-1/3
|
|||
页数 | 3 页 | ||
下载 | [ L8550.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
L8550 | TO-92 Plastic-Encapsulate Transistors | LRC |
L8550HPLT1G | General Purpose Transistors | Leshan Radio Company |
L8550HPLT3G | General Purpose Transistors | Leshan Radio Company |
L8550HQLT1G | General Purpose Transistors | Leshan Radio Company |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |