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PDF ( 数据手册 , 数据表 ) 8N80C

零件编号 8N80C
描述 FQP8N80C
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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8N80C 数据手册, 描述, 功能
December 2013
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU
N-Channel QFET® MOSFET
800 V, 8.0 A, 1.55
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V,
ID = 4.0 A
• Low Gate Charge (Typ. 35 nC)
• Low Crss (Typ. 13 pF)
• 100% Avalanche Tested
D
GDS
TO-220 GDS
D
G
TO-220F
S
G
TO-220F
Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQP8N80C FQPF8N80C
800
8 8*
5.1 5.1 *
32 32 *
± 30
850
8
17.8
4.5
178 59
1.43 0.48
-55 to +150
300
S
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP8N80C
0.89
0.5
62.5
FQPF8N80C
2.66
--
62.5
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
1
www.fairchildsemi.com







8N80C pdf, 数据表
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
8
www.fairchildsemi.com














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