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PDF ( 数据手册 , 数据表 ) F8N60

零件编号 F8N60
描述 PJF8N60
制造商 Pan Jit International
LOGO Pan Jit International LOGO 


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F8N60 数据手册, 描述, 功能
PJP8N60 / PJF8N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 8A , 600V, RDS(ON)=1.2@VGS=10V, ID=4.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
1
2
GD
S
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
INTERNAL SCHEMATIC DIAGRAM
Drain
TYPE
PJP8N60
PJF8N60
MARKING
P8N60
F8N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
Symbol PJP8N60 PJF8N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 8
8
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TA= 2 5 OC
IDM
PD
32
125
1.0
32
45
0.39
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
IAS=8.0A, VDD=50V, L=15.6mH
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
-55 to +150
500
1 2.78
Junction-to Ambient Thermal Resistance
RθJA
62.5
100
Note: 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE
May 10,2010-REV.01
PAGE . 1
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