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零件编号 | 160N75F3 | ||
描述 | N-channel MOSFET | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
STB160N75F3
STP160N75F3 - STW160N75F3
N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK
MDmesh™ low voltage Power MOSFET
TARGET SPECIFICATION
General features
Type
STB160N75F3
VDSS
75V
STP160N75F3
75V
STW160N75F3
75V
1. Current limited by package
■ Ultra low on-resistance
■ 100% Avalanche tested
RDS(on)
4.2mΩ
4.5mΩ
4.5mΩ
ID
120A (1)
120A (1)
120A (1)
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “Single Feature
Size™“strip-based process with less critical
alignment steps and therefore a remarkable
manufacturing reproducibility. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and low gate charge.
Applications
■ Switching application
3
2
1
TO-220
TO-247
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB160N75F3
STP160N75F3
STW160N75F3
Marking
160N75F3
160N75F3
160N75F3
Package
D²PAK
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
February 2007
Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
1/13
www.st.com
13
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Package mechanical data
STB160N75F3 - STP160N75F3 - STW160N75F3
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
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页数 | 13 页 | ||
下载 | [ 160N75F3.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
160N75F3 | N-channel MOSFET | STMicroelectronics |
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