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零件编号 | STF8NM60ND | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
STD8NM60ND, STF8NM60ND
STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
650 V
650 V
650 V
650 V
< 0.70 Ω
< 0.70 Ω
< 0.70 Ω
< 0.70 Ω
7A
7A
7 A(1)
7A
1. Limited only by maximum temperature allowed
■ The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
8NM60ND
8NM60ND
8NM60ND
8NM60ND
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2009
Rev 1
1/17
www.st.com
17
http://www.Datasheet4U.com
Electrical characteristics
STx8NM60ND
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
AM03197v1
RDS(on)
(norm)
AM03198v1
1.00
0.90
0.80
1.9
1.7
1.5
1.3
1.1
0.9
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.7
0.5
-50 -25
0
25 50 75 100 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
VSD
(V)
1.2 TJ=-50°C
AM03199v1
BVDSS
(norm)
1.07
AM031200v1
1.0
0.8
0.6
TJ=150°C
0.4
TJ=25°C
0.2
0
0
10 20 30 40 50 ISD(A)
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25 0
25 50 75 100 TJ(°C)
8/17
Revision history
6 Revision
history
Table 9. Document revision history
Date
Revision
09-Feb-2009
1 First release
STx8NM60ND
Changes
16/17
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页数 | 17 页 | ||
下载 | [ STF8NM60ND.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STF8NM60N | N-channel Power MOSFET | STMicroelectronics |
STF8NM60N | N-channel Power MOSFET | STMicroelectronics |
STF8NM60ND | Power MOSFET ( Transistor ) | STMicroelectronics |
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