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PDF ( 数据手册 , 数据表 ) STB24NM60N

零件编号 STB24NM60N
描述 Power MOSFET ( Transistor )
制造商 STMicroelectronics
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STB24NM60N 数据手册, 描述, 功能
STB24NM60N
N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET
D²PAK
Features
Order codes
STB24NM60N
VDSS
(@Tjmax)
650 V
RDS(on)
max.
< 0.19 Ω
ID
17 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
These N-channel 600 V Power MOSFET devices
are made using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a new vertical structure to
the company’s strip layout to yield one of the
world’s lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converter.
3
1
D²PAK
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STB24NM60N
Marking
24NM60N
3
!-V
Package
D²PAK
Packaging
Tape and reel
February 2011
Doc ID 010008 Rev 1
1/15
www.st.com
15
http://www.Datasheet4U.com







STB24NM60N pdf, 数据表
Test circuits
3 Test circuits
STB24NM60N
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
VGS
PW
VD
RG
RL
2200
μF
D.U.T.
3.3
μF VDD
12V 47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
μF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
AM01468v1
PW
1kΩ
AM01469v1
Figure 16. Test circuit for inductive load
Figure 17. Unclamped inductive load test
switching and diode recovery times
circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
B
B
G
RG
L=100μH
D
S
3.3
μF
1000
μF
VDD
Vi
L
VD
2200
3.3
μF μF VDD
ID
D.U.T.
AM01470v1
Pw
AM01471v1
Figure 18. Unclamped inductive waveform
V(BR)DSS
VD
Figure 19. Switching time waveform
ton
tdon
tr
toff
tdoff
tf
VDD
IDM
ID
VDD
0
90%
10% VDS
90%
VGS
90%
10%
AM01472v1 0 10%
AM01473v1
8/15 Doc ID 010008 Rev 1














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