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零件编号 | IR-910-350C1 | ||
描述 | Infrared Emitting Diode | ||
制造商 | ETC | ||
LOGO | |||
1 Page
IR-910-350C1
Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 )
ITEM
SYMBOL CONDITIONS
Power Output
PO IF=20mA
Forward Voltage
VF IF=20mA
Reverse Current
IR VR=5V
Peak Wavelength
p IF=20mA
Spectral Line Half Width
IF=20mA
Half Intensity Beam Angle
IF=20mA
Rise Time
Tr IFP=50mA
Fall Time
Tf IFP=50mA
Junction Capacitance
Cj 1MHz ,V=0V
Temp. Coefficient of PO
P/T IF=10mA
Temp. Coefficient of VF
V/T IF=10mA
MIN
TYP
6.0
1.3
910
60
±25
70
-0.5
-1.6
MAX
1.6
100
UNIT
mW
V
A
nm
nm
deg.
S
S
pF
%/
mV/
FEATURES
APPLICATIONS
High-output Power
Compact
High Reliability
Optical Switches
Optical Sensors
Medical Application
Anode
Cathode
Dimensions (Unit:mm)
1. ABSOLUTE MAXIMUM RATINGS (Ta=25 )
ITEM
SYMBOL RATINGS
Forward Current (DC)
IF
60
Forward Current (Pulse)*1 IFP
0.5
Reverse Voltage
VR 5
Power Dissipation
PD 100
Operating Temp.
Topr
-20 TO 85
Storage Temp.
Tstg -30 TO 100
Junction Temp.
Tj 100
Lead Soldering Temp.*2
Tls
260
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body
UNIT
mA
A
V
mW
Power Light Systems GmbH, Kinzerallee 20, 12555 Berlin, Germany
TEL. +49(30)6501-7868 / FAX +49(30)6501-7869, email: [email protected]
http://www.Datasheet4U.com
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页数 | 1 页 | ||
下载 | [ IR-910-350C1.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IR-910-350C1 | Infrared Emitting Diode | ETC |
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