DataSheet8.cn


PDF ( 数据手册 , 数据表 ) 2SA821

零件编号 2SA821
描述 PNP Transistor
制造商 JIANGSU CHANGJIANG
LOGO JIANGSU CHANGJIANG LOGO 


1 Page

No Preview Available !

2SA821 数据手册, 描述, 功能
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA821
TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 0.25 W Tamb=25
Collector current
ICM: -0.03 A
Collector-base voltage
V(BR)CBO : -210 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 92
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic= -50 A IE=0
IC= -0.1 mA , IB=0
-210
-210
V
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -50 A IC=0
-5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO VCB=-150V, IE=0
IEBO VEB= -4.5 V , IC=0
hFE
VCE=-3 V, IC= -5mA
56
-1 A
-1 A
270
Collector-emitter saturation voltage
VCEsat
IC= -2mA, IB= -0.2mA
-0.6 V
Transition frequency
f T VCE=-5V, IC= -2mA 30
MHz
Output capacitance
Cob VCE=-10V,IE=0,f=1MHz
12 pF
CLASSIFICATION OF hFE
Rank
Range
N
56-120
P
82-180
Q
120-270
Free Datasheet http://www.Datasheet4U.com












页数 3 页
下载[ 2SA821.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
2SA821PNP Plastic Encapsulated TransistorSecos
Secos
2SA821PNP TransistorJIANGSU CHANGJIANG
JIANGSU CHANGJIANG
2SA821SHIGH VOLTAGE AMPLIFIER TRANSISTORROHM Semiconductor
ROHM Semiconductor
2SA821SPNP TransistorWEJ
WEJ

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap