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零件编号 | 2SA821 | ||
描述 | PNP Transistor | ||
制造商 | JIANGSU CHANGJIANG | ||
LOGO | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA821
TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 0.25 W Tamb=25
Collector current
ICM: -0.03 A
Collector-base voltage
V(BR)CBO : -210 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 92
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic= -50 A IE=0
IC= -0.1 mA , IB=0
-210
-210
V
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -50 A IC=0
-5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO VCB=-150V, IE=0
IEBO VEB= -4.5 V , IC=0
hFE
VCE=-3 V, IC= -5mA
56
-1 A
-1 A
270
Collector-emitter saturation voltage
VCEsat
IC= -2mA, IB= -0.2mA
-0.6 V
Transition frequency
f T VCE=-5V, IC= -2mA 30
MHz
Output capacitance
Cob VCE=-10V,IE=0,f=1MHz
12 pF
CLASSIFICATION OF hFE
Rank
Range
N
56-120
P
82-180
Q
120-270
Free Datasheet http://www.Datasheet4U.com
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页数 | 3 页 | ||
下载 | [ 2SA821.PDF 数据手册 ] |
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