|
|
零件编号 | IRFP22N50A | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | Vishay | ||
LOGO | |||
1 Page
IRFP22N50A, SiHFP22N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
120
32
52
Single
0.23
TO-247AC
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge Converters
• Power Factor Correction Boost
TO-247AC
IRFP22N50APbF
SiHFP22N50A-E3
IRFP22N50A
SiHFP22N50A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 4.87 mH, Rg = 25 , IAS = 22 A (see fig. 12).
c. ISD 22 A, dI/dt 190 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
22
14
88
2.2
1180
22
28
277
4.8
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91207
S11-0446-Rev. C, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Free Datasheet http://www.Datasheet4U.com
www.vishay.com
Package Information
Vishay Siliconix
TO-247AC (High Voltage)
B
3 R/2
Q
2xR
(2)
4
E
E/2
S
D
A
A2
A
4
A
7 ØP
Ø k M DBM
D2
(Datum B)
ØP1
4
D1
5 L1
12
3
D4
Thermal pad
CL
See view B
A
4
E1
0.01 M D B M
2 x b2
3xb
2x e
b4
0.10 M C A M
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
C
A1
D DE E
CC
Planting
View A - A
(b1, b3, b5)
Base metal
(c) c1
View B
(b, b2, b4)
(4)
Section C - C, D - D, E - E
MILLIMETERS
DIM.
MIN.
MAX.
A 4.58 5.31
A1 2.21 2.59
A2 1.17 2.49
b 0.99 1.40
b1 0.99 1.35
b2 1.53 2.39
b3 1.65 2.37
b4 2.42 3.43
b5 2.59 3.38
c 0.38 0.86
c1 0.38 0.76
D
19.71
20.82
D1 13.08
-
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
INCHES
MIN.
MAX.
0.180
0.209
0.087
0.102
0.046
0.098
0.039
0.055
0.039
0.053
0.060
0.094
0.065
0.093
0.095
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.820
0.515
-
DIM.
D2
E
E1
e
Øk
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51 1.30
15.29
15.87
13.72
-
5.46 BSC
0.254
14.20
16.25
3.71 4.29
7.62 BSC
3.51 3.66
- 7.39
5.31 5.69
4.52 5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
-
0.215 BSC
0.010
0.559
0.640
0.146
0.169
0.300 BSC
0.138
0.144
- 0.291
0.209
0.224
0.178
0.216
0.217 BSC
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
1 Document Number: 91360
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com
|
|||
页数 | 9 页 | ||
下载 | [ IRFP22N50A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRFP22N50A | Power MOSFET ( Transistor ) | Vishay |
IRFP22N50A | SMPS MOSFET | International Rectifier |
IRFP22N50APBF | Power MOSFET ( Transistor ) | IRF |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |