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零件编号 | STGB20V60DF | ||
描述 | 600V 20A very high speed trench gate field-stop IGBT | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
TAB
TAB
3
2
1
TO-220
3
1
D²PAK
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.)
@ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
Table 1. Device summary
Marking
Package
Packaging
STGB20V60DF
STGP20V60DF
STGW20V60DF
STGWT20V60DF
GB20V60DF
GP20V60DF
GW20V60DF
GWT20V60DF
D²PAK
TO-220
TO-247
TO-3P
Tape and reel
Tube
Tube
Tube
June 2013
This is information on a product in full production.
DocID024360 Rev 3
1/23
www.st.com
23
http://www.Datasheet4U.com
Electrical characteristics
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Figure 14. Capacitance variations
C (pF)
C ies
AM17183v1
1000
100
C res
Coes
10
0.1
1
10 VCE (V)
Figure 16. Switching losses vs. collector
current
E (μJ)
AM17185v1
1000
800
VCC 400V, VGE= 15V,
Rg=10Ω, TJ = 175°C
600
400
200
EON
EOFF
0
0 10 20 30 40 Ic (A)
Figure 18. Switching losses vs. junction
temperature
E (μJ)
AM17186v1
450
VCC 400V, VGE= 15V,
400 IC= 20 A, Rg= 10 Ω
350
300
EON
250
200
EOFF
150
100
0 25 50 75 100 125 150 175 TJ (ºC)
Figure 15. Gate charge vs. gate-emitter voltage
VGE (V)
16
14
12
10
8
6
4
2
0
0
AM17182v1
25 50 75 100 125 Qg (nC)
Figure 17. Switching losses vs. gate resistance
E (μJ)
VCC 400V, VGE= 15V,
IC =20 A, TJ = 175°C
700
E ON
500
300
AM17184v1
E OFF
100
0
10 20 30 40 RG (Ω)
Figure 19. Switching losses vs. collector
emitter voltage
E (μJ)
600
500
VGE= 15V,TJ = 175 °C
IC= 20 A, Rg= 10 Ω
AM17187v1
400
EON
300
EOFF
200
100
150 200 250 300 350 400 450 Vce (V)
8/23 DocID024360 Rev 3
http://www.Datasheet4U.com
Package mechanical data
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Dim.
A
A1
b
b1
b2
c
D
E
e
L
L1
L2
∅P
∅R
S
Table 10. TO-247 mechanical data
mm.
Min.
Typ.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
16/23
DocID024360 Rev 3
http://www.Datasheet4U.com
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页数 | 23 页 | ||
下载 | [ STGB20V60DF.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STGB20V60DF | 600V 20A very high speed trench gate field-stop IGBT | STMicroelectronics |
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