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PDF ( 数据手册 , 数据表 ) IRF6785MTRPbF

零件编号 IRF6785MTRPbF
描述 DIGITAL AUDIO MOSFET
制造商 IRF
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IRF6785MTRPbF 数据手册, 描述, 功能
PD - 97282
IRF6785MTRPbFDIGITAL AUDIO MOSFET
Features
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 250W per channel into 8Load in
Half-Bridge Configuration Amplifier
Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
Key Parameters
VDS 200
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) max
85
26
3.0
V
m:
nC
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Maximum Power Dissipation
ePower Dissipation
ePower Dissipation
dSingle Pulse Avalanche Energy
ÙAvalanche Current
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
ekJunction-to-Ambient
hkJunction-to-Ambient
ikJunction-to-Ambient
jkJunction-to-Case
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Max.
200
± 20
19
3.4
2.7
27
57
2.8
1.8
33
8.4
0.022
-40 to + 150
Typ.
–––
12.5
20
–––
1.4
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
1
04/18/07
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IRF6785MTRPbF pdf, 数据表
IRF6785MTRPbF
DirectFET™ Outline Dimension, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET™ Part Marking
8
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX MAX MAX
A 6.25 6.35 0.246 0.250
B 4.80 5.05 0.189 0.201
C 3.85 3.95 0.152 0.156
D 0.35 0.45 0.014 0.018
E 0.68 0.72 0.027 0.028
F 0.68 0.72 0.027 0.028
G 0.93 0.97 0.037 0.038
H 0.63 0.67 0.025 0.026
J 0.28 0.32 0.011 0.013
K 1.13 1.26 0.044 0.050
L 2.53 2.66 0.100 0.105
M 0.616 0.676 0.0235 0.0274
R 0.020 0.080 0.0008 0.0031
P 0.08 0.17 0.003 0.007
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
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