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零件编号 | MX29F800CB | ||
描述 | 8M-BIT [1024K x 8 / 512K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY | ||
制造商 | MACRONIX | ||
LOGO | |||
1 Page
MX29F800C T/B
FEATURES
8M-BIT [1024K x 8 / 512K x 16] SINGLE VOLTAGE
5V ONLY FLASH MEMORY
GENERAL FEATURES
• Single Power Supply Operation
- 4.5 to 5.5 volt for read, erase, and program operations
• 1,048,576 x 8 / 524,288 x 16 switchable
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Sector Structure
- 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1, and 64K-Byte x 15
• Sector protection
- Hardware method to disable any combination of sectors from program or erase operations
- Temporary sector unprotected allows code changes in previously locked sectors
• Latch-up protected to 100mA from -1V to Vcc + 1V
• Compatible with JEDEC standard
- Pinout and software compatible to single power supply Flash
PERFORMANCE
• High Performance
- Access time: 70ns
- Byte/Word program time: 9us/11us (typical)
- Erase time: 0.7s/sector, 8s/chip (typical)
• Low Power Consumption
- Low active read current: 40mA (maximum) at 5MHz
- Low standby current: 1uA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention
SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from or program data to another sector which is not being
erased
• Status Reply
- Data# Polling & Toggle bits provide detection of program and erase operation completion
HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
- Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal state machine to read mode
PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball LFBGA (6x8mm)
• All devices are RoHS Compliant
• All non RoHS Compliant devices are not recommeded for new design in
P/N:PM1493
REV. 1.2, JUL. 05, 2012
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MX29F800C T/B
SECTOR PROTECT OPERATION
When a sector is protected, program or erase operation will be disabled on these sectors. MX29F800C T/B pro-
vides one method for sector protection.
Once the sector is protected, the sector remains protected until next chip unprotect, or is temporarily unprotected
by asserting RESET# pin at Vhv. Refer to temporary sector unprotect operation for further details.
This method is by applying Vhv on RESET# pin. Refer to Figure 12 for timing diagram and Figure 13 for the al-
gorithm for this method.
CHIP UNPROTECT OPERATION
MX29F800C T/B provides one method for chip unprotect. The chip unprotect operation unprotects all sectors
within the device. It is recommended to protect all sectors before activating chip unprotect mode. All sector are
unprotected when shipped from the factory.
This method is by applying Vhv on RESET# pin. Refer to Figure 12 for timing diagram and Figure 13 for algo-
rithm of the operation.
TEMPORARY SECTOR UNPROTECT OPERATION
System can apply RESET# pin at Vhv to place the device in temporary unprotect mode. In this mode, previously
protected sectors can be programmed or erased just as it is unprotected. The devices returns to normal opera-
tion once Vhv is removed from RESET# pin and previously protected sectors are again protected.
AUTOMATIC SELECT OPERATION
When the device is in Read array mode or erase-suspended read array mode, user can issue read silicon ID
command to enter read silicon ID mode. After entering read silicon ID mode, user can query several silicon IDs
continuously and does not need to issue read silicon ID mode again. When A0 is Low, device will output Ma-
cronix Manufacture ID C2. When A0 is high, device will output Device ID. In read silicon ID mode, issuing reset
command will reset device back to read array mode or erase-suspended read array mode.
Another way to enter read silicon ID is to apply high voltage on A9 pin with CE#, OE# and A1 at Vil. While the
high voltage of A9 pin is discharged, device will automatically leave read silicon ID mode and go back to read
array mode or erase-suspended read array mode. When A0 is Low, device will output Macronix Manufacture ID
C2. When A0 is high, device will output Device ID.
P/N:PM1493
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http://www.Datasheet4U.com
MX29F800C T/B
DC CHARACTERISTICS
Symbol Description
Iilk Input Leak
Iolk Output Leak
Iilk9 A9 Leak
Icr1 Read Current (10MHz)
Icr2 Read Current (5MHz)
Min.
Typ. Max. Remark
±1.0uA
10uA
35uA A9: 12.5V
50mA CE#=Vil, OE#=Vih
40mA CE#=Vil, OE#=Vih
Isb1 Standby Current (TTL)
1mA
Vcc=Vcc max,
CE#=Vih
other pin disable
Isb2 Standby current (CMOS)
Vcc=Vccmax,
1uA 50uA CE#=vcc +0.3V,
other pin disable
Icw Write Current
Vil Input Low Voltage
-0.3V
Vih Input High Voltage
0.7xVcc
Very High Voltage for hardware Protect/
Vhv Unprotect/Auto Select/
Temporary Unprotect
11.5V
50mA
0.8V
CE#=Vil, OE#=Vih,
WE#=Vil
Vcc+0.3V
12V 12.5V
Vol Output Low Voltage
0.45V
Iol=2.1mA,
Vcc=Vcc min
Voh1 Ouput High Voltage (TTL)
Voh2 Ouput High Voltage (CMOS)
2.4V
Vcc-0.4V
Ioh1=-2mA
Ioh2=-100uA
P/N:PM1493
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REV. 1.2, JUL. 05, 2012
http://www.Datasheet4U.com
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页数 | 30 页 | ||
下载 | [ MX29F800CB.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MX29F800CB | 8M-BIT [1024K x 8 / 512K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY | MACRONIX |
MX29F800CT | 8M-BIT [1024K x 8 / 512K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY | MACRONIX |
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