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零件编号 | A1020 | ||
描述 | PNP Transistor - 2SA1020 | ||
制造商 | Toshiba Semiconductor | ||
LOGO | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications
Power Switching Applications
• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SC2655
2SA1020
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
−50
−50
−5
−2
900
150
−55 to 150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
IC = −10 mA, IB = 0
VCE = −2 V, IC = −0.5 A
VCE = −2 V, IC = −1.5 A
IC = −1 A, IB = −0.05 A
IC = −1 A, IB = −0.05 A
VCE = −2 V, IC = −0.5 A
VCB = −10 V, IE = 0, f = 1 MHz
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Min Typ. Max Unit
⎯ ⎯ −1.0 µA
⎯ ⎯ −1.0 µA
−50 ⎯
⎯
V
70 ⎯ 240
40 ⎯ ⎯
⎯
⎯ −0.5
V
⎯
⎯ −1.2
V
⎯ 100 ⎯ MHz
⎯ 40 ⎯ pF
Turn-on time
Switching time Storage time
ton
Output
⎯ 0.1 ⎯
20 µs
Input IB2
tstg IB2 IB1
⎯ 1.0 ⎯
µs
VCC = −30 V
Fall time
tf −IB1 = IB2 = 0.05 A
DUTY CYCLE ≤ 1%
⎯ 0.1 ⎯
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
1 2004-07-07
Free Datasheet http://www.Datasheet4U.com
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页数 | 5 页 | ||
下载 | [ A1020.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
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