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零件编号 | MG100Q2YS65H | ||
描述 | Silicon N Channel IGBT | ||
制造商 | Toshiba | ||
LOGO | |||
1 Page
MG100Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG100Q2YS65H
High Power & High Speed Switching
Applications
Unit: mm
· High input impedance
· Enhancement-mode
· The electrodes are isolated from case.
Equivalent Circuit
E1
E2
C1 E2
G1 E1/C2 G2
JEDEC
JEITA
TOSHIBA
Weight: 255 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal
Mounting
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
¾
¾
Rating
1200
±20
100
200
100
200
690
150
-40 to 125
2500
(AC 1 minute)
3
3
Unit
V
V
A
A
W
°C
°C
V
N▪m
―
―
2-95A4A
1 2002-10-04
Free Datasheet http://www.Datasheet4U.com
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页数 | 6 页 | ||
下载 | [ MG100Q2YS65H.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MG100Q2YS65H | Silicon N Channel IGBT | Toshiba |
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