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PDF ( 数据手册 , 数据表 ) MG100Q2YS65H

零件编号 MG100Q2YS65H
描述 Silicon N Channel IGBT
制造商 Toshiba
LOGO Toshiba LOGO 


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MG100Q2YS65H 数据手册, 描述, 功能
MG100Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG100Q2YS65H
High Power & High Speed Switching
Applications
Unit: mm
· High input impedance
· Enhancement-mode
· The electrodes are isolated from case.
Equivalent Circuit
E1
E2
C1 E2
G1 E1/C2 G2
JEDEC
JEITA
TOSHIBA
Weight: 255 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal
Mounting
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
¾
¾
Rating
1200
±20
100
200
100
200
690
150
-40 to 125
2500
(AC 1 minute)
3
3
Unit
V
V
A
A
W
°C
°C
V
Nm
2-95A4A
1 2002-10-04
Free Datasheet http://www.Datasheet4U.com












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